SFT6678MUBTXV [SSDI]

Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN;
SFT6678MUBTXV
型号: SFT6678MUBTXV
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254, 3 PIN

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SFT6678 SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
15 AMPS  
400 Volts  
NPN High Speed  
Power Transistor  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
SFT6678 M __ TX  
Screening 2/ __ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Application Notes:  
• Replaces Industry Standard 2N6678  
• Designed for High Voltage, High Speed,  
Power Switching Applications Such as:  
• Off-Line Supplies  
• Converter Circuits  
• Pulse Width Modulated Regulators  
Lead Bend 3/ _ = Straight Leads  
UB = Up Bend  
DB = Down Bend  
Package  
M = TO-254  
Z = TO-254Z  
/3 = TO-3  
• Motor Controls  
• Deflection Circuits  
Maximum Ratings  
Symbol  
Value  
Units  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
VCEO  
VCBO  
VEBO  
IC  
Volts  
Volts  
Volts  
Amps  
Amps  
°C  
400  
650  
8.0  
Continuous Collector Current  
Continuous Base Current  
15  
IB  
5.0  
Operating and Storage Temperature  
TJ, TSTG  
-65 to +200  
Total Power Dissipation  
@ TC=25°C  
@ TA=25°C  
W
W
175  
6.0  
PD  
Maximum Thermal Resistance  
(Junction to Case)  
(Ambient to Case)  
R0JC  
R0JA  
1.0  
29.17  
ºC/W  
TO-254 (M)  
TO-254 (Z)  
TO-3 (/3)  
NOTES:  
Pulse Test: Pulse Width = 300 µs, Duty Cycle < 2%  
*
1/ For ordering information, price, and availability contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Up and down bend configurations available for M and Z (TO-254 and TO-254Z) packages only.  
4/ All electrical characteristics @ 25°C, unless otherwise specified.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0019D  
DOC  
SFT6678 SERIES  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristics  
Symbol  
ICEV  
Min  
Max  
Units  
Collector Cutoff Current  
VCE= 400V, VBE(off) =1.5V  
VCE= 650V, VBE(off) =1.5V  
VCE= 650V, VBE(off) =1.5V  
TC = 25°C  
TC = 25°C  
TC = 125°C  
0.5  
1.0  
50  
µA  
µA  
µA  
-
-
Collector – Base Leakage Current  
ICBO  
IEBO  
VCB = 650V  
-
-
1
2
-
mA  
mA  
V
Emitter Cutoff Current  
(VEB = 8V, IC = 0)  
Collector-Emitter Sustaining Voltage  
(IC = 200mA, IB = 0)  
VCEO(sus)  
400  
HFE1  
HFE2  
HFE3  
8
15  
4
20  
40  
-
VCE = 3V, 1C = 15A, TA = 25°C  
VCE = 3V, 1C = 1A, TA = 25°C  
VCE = 3V, 1C = 15A,TA = -55°C  
DC Current Gain*  
Base-Emitter Saturation Voltage*  
(IC = 15A, IB = 3A)  
VBE (SAT)  
-
1.5  
V
V
Collector-Emitter Saturation Voltage*  
(IC = 15A, IB = 3A)  
-
-
1.0  
2.0  
(TC = 25°C)  
(TC = 125°C)  
V
CE (SAT)  
Current Gain  
(IC = 1A, VCE = 10V f = 5MHz)  
,
|hFE|  
Cob  
3
10  
Output Capacitance  
150  
500  
pF  
(VCB = 10V f = 0.1MHz)  
,
(VCC = 200V I = 15A, IB1 = IB2 = 3A, tP = 50 μsec, Duty  
,
C
Cycle < 2% V = 6V R = 13.5)  
,
,
B
L
Delay Time  
td  
-
-
0.1  
2.5  
t(on)  
Rise Time  
tr  
µsec  
Storage Time  
ts  
-
-
0.6  
0.5  
t(off)  
Fall Time  
tf  
Cross Over Time  
(IC = 15 A(pk), VCLAMP = 450V, IB1 = 3 A, VBE(off) = 6V)  
tc  
-
0.5  
µsec  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0019D  
DOC  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SFT6678 SERIES  
VCE = 11.7 V, IC = 15 A, 1 sec  
VCE = 30 V, IC = 5.9 A, 1 sec  
VCE = 100 V, IC = 0.25 A, 1 sec  
Safe Operating Area, DC  
VCE = 400 V, IC = 10 mA, 1 sec  
Safe Operating Area,  
clamped switching  
VCC = 15 V, VBB2 = 5 V, RBB1 = 5 , RBB2 = 1.5, L = 50µH,  
Vclamp = 450V, IC = 15 A  
Case Outline: TO-254  
Case Outline: TO-254Z  
Case Outline: TO-3  
Lead Options  
DB (Down Bend) UB (Up Bend)  
PIN ASSIGNMENT (Standard)  
Package  
TO-3 (/3)  
TO-254 (M)  
TO-254 (Z)  
Collector  
Case  
Emitter  
Base  
Pin 3  
Pin 3  
Pin 3  
Pin 2  
Pin 2  
Pin 2  
Pin 1  
Pin 1  
Available Part Numbers:  
SFT6678M  
SFT6678MDB  
SFT6678MUB  
SFT6678Z  
SFT6678ZDB  
SFT6678ZUB  
SFT6678/3  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0019D  
DOC  

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