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元器件品牌
SGB25UF
[SSDI]
HIGH VOLTAGE RECTIFIER; 高压整流
元器件型号：
SGB25UF
生产厂家：
SOLID STATES DEVICES, INC
描述和应用：
HIGH VOLTAGE RECTIFIER
高压整流
高压
PDF文件：
总2页 (文件大小：161K)
下载文档：
下载PDF数据表文档文件
型号参数：SGB25UF参数
查看货源
SGB25UFS
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
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156
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0
SSDI
SGB25UFSMS
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
Warning
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4
SSDI
SGB25UFSMS
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
Warning
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9
SSDI
SGB25UFSMSS
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
Warning
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156
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6
SSDI
SGB25UFSMSS
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN
Warning
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156
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0
SSDI
SGB25UFSMSTX
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
Warning
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156
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10
SSDI
SGB25UFSMSTX
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN
Warning
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156
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0
SSDI
SGB25UFSMSTXV
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
Warning
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156
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2
SSDI
SGB25UFTX
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
Warning
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on line
156
-
0
SSDI
SGB30N60
Fast IGBT in NPT-technology
Warning
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156
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38
INFINEON
SGB30N60
Fast IGBT in NPT-technology
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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38
INFINEON
SGB30N60
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Warning
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on line
156
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6
INFINEON
SGB30N60_09
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Warning
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156
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6
INFINEON
SGB30N60ATMA1
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
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0
INFINEON
SGB30UF
HIGH VOLTAGE RECTIFIER
Warning
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156
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8
SSDI
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