SH0024B [SSDI]
SCHOTTKY RECTIFIER;型号: | SH0024B |
厂家: | SOLID STATES DEVICES, INC |
描述: | SCHOTTKY RECTIFIER |
文件: | 总2页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SED20HB100
SED20HE100
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
100 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information 1/
SED20 __ 100 __
L Screening2/ = None
⏐
FEATURES:
• Low Reverse Leakage
• Low Forward Voltage Drop
• Hermetically Sealed Power Surface
Mount Package
TX = TX Level
TXV = TXV Level
S = S Level
⏐
⏐
⏐
L
Configuration
HB = without lead
HE = with lead
• Guard Ring for Overvoltage Protection
• Eutectic Die Attach
• 175oC Operating Temperature
• TX, TXV, and Space Level Screening
Available2/
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
IO
20
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TA = 100oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction
IFSM
175
to Reach Equilibrium between Pulses, TA = 25oC)
Operating and Storage Temperature
TOP & Tstg -55 to +175
oC
Maximum Thermal Resistance
Junction to Case
oC/W
1.25
RθJC
Notes:
SEDPACK 1
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact
Factory.
2/ Screening to MIL-PRF-19500.
HB Series
HE Series
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0024B
DOC
SED20HB100
SED20HE100
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Symbol
Maximum
Unit
VDC
VDC
mA
pF
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
IF =10 ADC
IF =20 ADC
VF1
VF2
0.78
0.87
(TA = 25oC, 300-500 μsec Pulse)
Instantaneous Forward Voltage Drop
IF =10 ADC
IF =20 ADC
VF1
VF2
0.63
0.70
(TA = +125oC, 300-500 μsec Pulse)
TA = 25oC
IR1
IR2
1.5
10
Reverse Leakage Current
(Rated VR, 300 μsec pulse minimum)
TA = 125oC
Junction Capacitance
CJ
600
(VR = 10 VDC, TA = 25oC, f = 1 MHz)
CASE OUTLINE: SED10HB45
CASE OUTLINE: SED10HE45
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0024B
DOC
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