SHF1101 [SSDI]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SHF1101 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
| 文件： | 总3页 (文件大小：1566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVERSE RECOVERY IN 5 nsec FLAT
SHF1101 - SHF1201 SERIES
1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier
Solid State Devices, Inc. (SSDI) announces the fastest,
most rugged rectifier diodes on the market, the SHF1101
- SHF1201 Series. ese diodes are more reliable than
the 1N6642 while matching its reverse recovery. ey are
also a smaller and faster replacement for the 1N5806. e
SHF1101 - SHF1201 series is the perfect combination of
high performance and high reliability in a small, light-
weight package.
Features:
▪ Excellent liquid-to-liquid
thermal shock performance
▪ Available in axial & square tab versions
▪ TX, TXV, and S-level screening available.
▪ Replacement for 1N6638, 1N6642 and
1N5806
▪ Low forward voltage drop
▪ Low reverse leakage current
▪ Avalanche breakdown
▪ Hermetically sealed
▪ Solid silver leads
▪ For high efficiency applications
▪ Void free glass ceramic chip
construction
▪ High temperature metallurgical class I
bond
Solid State Devices, Inc.
ISO 9001:2008 and AS9100:2004 Rev. B
(562) 404-4474 ▪ www.ssdi-power.com
Contact us today for more information about this
product or any of SSDI’s broad range of high reliability
products and services.
SHF1101 thru SHF1201
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
100 – 200 VOLTS
5 nsec
Designer’s Data Sheet
Part Number/Ordering Information 1/
____ __ __
SHF1
HYPER FAST
2/
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Screening
RECOVERY RECTIFIER
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
FEATURES:
Hyper fast reverse recovery time: 5 ns Max
Low forward voltage drop
Low reverse leakage current
Avalanche breakdown
Void free glass ceramic chip construction
Hermetically sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Device Type ( VRWM )
101 = 100 V
Solid silver leads
Excellent liquid-to-liquid thermal shock performance
Available in axial & square tab versions
For high efficiency applications
151 = 150 V
201 = 200 V
TX, TXV, and S-Level screening available2/
Replacement for 1N6638, 1N6642 and 1N5806
High temperature metallurgical class I bond
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SHF1101
SHF1151
SHF1201
100
150
200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRWM
VR
Volts
Average Rectified Forward Current
(Resistive load, 60 Hz, sine wave, TC = 25°C)
1
IO
Amp
Peak Surge Current
20
IFSM
Amps
°C
(8.3 msec pulse, half sine wave superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
Thermal Resistance
SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
20
80
RθJE
RθJL
°C/W
Axial Leaded
SMS
NOTES:
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0160A
DOC
SHF1101 thru SHF1201
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
LIMIT
UNIT
@ IF = 1mA
@ IF = 10mA
@ IF = 100mA
@ IF = 200mA
@ IF = 500mA
@ IF = 1A
VF1
VF2
VF3
VF4
VF5
VF6
0.525
0.650
0.800
0.850
0.910
0.980
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C)
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 150°C)
@ IF = 10mA
@ IF = 100mA
VF7
VF8
0.500
0.620
Vdc
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = -55°C)
@ IF = 10mA
@ IF = 100mA
VF9
VF10
0.810
0.900
SHF1101
SHF1151
SHF1201
100
150
200
Minimum Breakdown Voltage
IR = 100 μA
BVR
Vdc
nA
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR1
IR2
IR3
80
120
750
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR4
IR5
IR6
50
75
150
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 125°C)
µA
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
CJ1
6
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
CJ2
CJ3
trr
5
4
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 10V
pf
Maximum Reverse Recovery Time
(IF = 50 mA, IR = 100 mA, IRR = 25 mA)
5
nsec
nsec
Maximum Forward Recovery Time
(IF = 50 mA)
tfr
20
SMS
AXIAL
DIM
A
B
C
D
MIN
MAX
.085”
.200”
.028”
--
DIM
A
B
C
D
MIN
MAX
.075”
.140”
.022”
1.50”
.070”
.168”
.019”
.001”
.056”
.125”
.018”
1.00”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0160A
DOC
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