SHF1190SMSS [SSDI]

Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN;
SHF1190SMSS
型号: SHF1190SMSS
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

二极管
文件: 总2页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHF1160 & SHF1160SMS  
thru  
SHF1190 & SHF1190SMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number/Ordering Information 1/  
SHF11 __ __ __  
30 nsec  
1 Amp  
Hyper Fast Rectifier  
600 - 900 V  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
Features:  
Hyper fast recovery: 30 nsec maximum  
PIV to 900 Volts, consult factory for higher voltages  
Low reverse leakage current  
Hermetically sealed  
Void free construction  
Family/Voltage  
60 = 600 V  
70 = 700 V  
80 = 800 V  
90 = 900 V  
For high efficiency applications  
Higher voltages available – consult factory  
TX, TXV, and S level screening available2/  
Maximum Ratings  
Symbol  
Value  
Units  
SHF1160  
SHF1170  
SHF1180  
SHF1190  
600  
700  
800  
900  
VRRM  
VRSM  
VR  
Peak Repetitive Reverse and DC Blocking Voltage  
Average Rectified Forward Current  
Volts  
IO  
1.0  
25  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25°C  
)
Peak Surge Current  
IFSM  
Amps  
ºC  
(8.3 ms Pulse, Half Sine Wave, TA = 25°C  
)
Operating & Storage Temperature  
T
OP & TSTG -65 to +175  
Junction to Leads, L = 3/8  
Junction to Tabs  
50  
28  
Maximum Thermal Resistance  
RθJE  
ºC/W  
NOTES:  
Axial Lead Diode  
SMS  
1/ For ordering information, price, and availability - contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0157A  
DOC  
SHF1160 & SHF1160SMS  
thru  
SHF1190 & SHF1190SMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristic  
Symbol  
VF  
Max  
1.9  
2.4  
10  
Units  
VDC  
VDC  
µA  
Instantaneous Forward Voltage Drop  
(IF = 1ADC, TA = 25ºC pulsed)  
Instantaneous Forward Voltage Drop  
(IF = 1ADC, TA = -55ºC pulsed)  
VF  
Reverse Leakage Current  
(Rated VR, TA = 25ºC pulsed)  
IR  
Reverse Leakage Current  
(Rated VR, TA = 100ºC pulsed)  
IR  
200  
30  
µA  
Reverse Recovery Time  
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC)  
tRR  
CJ  
nsec  
pF  
Junction Capacitance  
(VR = 10VDC, TA = 25ºC, f = 1MHz)  
18  
DIM  
MIN  
MAX  
0.135”  
0.185”  
0.033”  
--  
Case Outline: (Axial)  
A
B
C
D
0.100”  
0.130”  
0.027”  
1.00”  
D
B
D
ØC  
ØA  
DIM  
A
MIN  
MAX  
0.155”  
0.230”  
0.030”  
--  
Case Outline: (SMS)  
0.140”  
0.180”  
0.020”  
0.002”  
B
B
A
C
D
A
D
C
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0157A  
DOC  

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