SHF1190SMSS [SSDI]
Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN;型号: | SHF1190SMSS |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN 二极管 |
文件: | 总2页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SHF1160 & SHF1160SMS
thru
SHF1190 & SHF1190SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SHF11 __ __ __
30 nsec
1 Amp
Hyper Fast Rectifier
600 - 900 V
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Features:
Hyper fast recovery: 30 nsec maximum
PIV to 900 Volts, consult factory for higher voltages
Low reverse leakage current
Hermetically sealed
Void free construction
Family/Voltage
60 = 600 V
70 = 700 V
80 = 800 V
90 = 900 V
For high efficiency applications
Higher voltages available – consult factory
TX, TXV, and S level screening available2/
Maximum Ratings
Symbol
Value
Units
SHF1160
SHF1170
SHF1180
SHF1190
600
700
800
900
VRRM
VRSM
VR
Peak Repetitive Reverse and DC Blocking Voltage
Average Rectified Forward Current
Volts
IO
1.0
25
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25°C
)
Peak Surge Current
IFSM
Amps
ºC
(8.3 ms Pulse, Half Sine Wave, TA = 25°C
)
Operating & Storage Temperature
T
OP & TSTG -65 to +175
Junction to Leads, L = 3/8
Junction to Tabs
50
28
Maximum Thermal Resistance
RθJE
ºC/W
NOTES:
Axial Lead Diode
SMS
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0157A
DOC
SHF1160 & SHF1160SMS
thru
SHF1190 & SHF1190SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
VF
Max
1.9
2.4
10
Units
VDC
VDC
µA
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = 25ºC pulsed)
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = -55ºC pulsed)
VF
Reverse Leakage Current
(Rated VR, TA = 25ºC pulsed)
IR
Reverse Leakage Current
(Rated VR, TA = 100ºC pulsed)
IR
200
30
µA
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC)
tRR
CJ
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
18
DIM
MIN
MAX
0.135”
0.185”
0.033”
--
Case Outline: (Axial)
A
B
C
D
0.100”
0.130”
0.027”
1.00”
D
B
D
ØC
ØA
DIM
A
MIN
MAX
0.155”
0.230”
0.030”
--
Case Outline: (SMS)
0.140”
0.180”
0.020”
0.002”
B
B
A
C
D
A
D
C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0157A
DOC
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SHF1190SMSTXV
Rectifier Diode, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
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