SHF1206SMSTX [SSDI]
2AMP 400-900V Hyper Fast Rectifier; 2AMP 400-900V超快速整流器
| 型号： | SHF1206SMSTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 2AMP 400-900V Hyper Fast Rectifier |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHF1204 & SHF1204SMS
thru
SHF1209 & SHF1209SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
2 AMP
400 - 900 V
Hyper Fast Rectifier
SHF12
__ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
S = S Level
Features:
• Hyper Fast Recovery: 40 nsec maximum
• PIV to 900 Volts, Consult Factory
• Hermetically Sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
• Void Free Construction
Family/Voltage
04 = 400 V
• For High Efficiency Applications
• Replaces UES1204, UES1206
• TX, TXV, S Level screening Available2/
06 = 600 V
08 = 800 V
09 = 900 V
Maximum Ratings
Symbol
Value
Units
SHF1204
SHF1206
SHF1208
SHF1209
400
600
800
900
VRRM
VRSM
VR
Peak Repetitive Reverse and DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)
Io
2.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
20
Amps
ºC
Operating & Storage Temperature
T
OP & TSTG
-65 to +175
RθJL
RθJE
35
28
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
Junction to Tabs
ºC/W
NOTES:
Axial Lead Diode
SMS
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0081G
SHF1204 & SHF1204SMS
thru
SHF1209 & SHF1209SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
VF
Max
1.7
1.9
10
Units
VDC
VDC
µA
Instantaneous Forward Voltage Drop
(IF = 1.2ADC, TA = 25ºC; pulsed)
Instantaneous Forward Voltage Drop
(IF = 2ADC, TA = 25ºC; pulsed)
VF
Reverse Leakage Current
(Rated VR, TA = 25ºC; pulsed)
IR
Reverse Leakage Current
(Rated VR, TA = 100ºC; pulsed)
IR
1
mA
pF
Junction Capacitance
(VR=10VDC, TA=25ºC, f=1MHz)
CJ
22
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC)
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 100ºC)
tRR
40
80
nsec
DIM
A
MIN
0.100”
0.130”
0.027”
1.00”
MAX
Case Outline: (Axial)
0.130”
0.180”
0.033”
--
B
D
B
D
ØC
ØA
C
D
DIM
A
MIN
MAX
0.140”
0.230”
0.030”
--
Case Outline: (SMS)
0.127”
0.180”
0.020”
0.002”
B
B
A
C
D
A
D
C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0081G
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