SPD1001TX [SSDI]
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, AXIAL PACKAGE-2;
| 型号： | SPD1001TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, AXIAL PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD0801 – SPD1001SMS
and
SPD0801SMS - SPD1001SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
80-100 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information1/
SPD ___ ___ ___
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening2/
TX = TX Level
TXV = TXV Level,
S = S-Level
FEATURES:
Extremely Low Forward Voltage Drop
High Surge Capability
•
•
•
•
•
PIV to 100 Volts
___ = Not Screened
Low Reverse Leakage Current
High Voltage Replacement for 1N5817-1N5819
Series
Package
____ = Axial Leaded
SMS = Surface Mount Square Tab
•
•
Surface Mount Versions Available
TX, TXV, and Space Level Screening Available2/
Voltage / Family 0801 = 80V
0901 = 90V
1001 = 100V
MAXIMUM RATINGS
Symbol
Value
Units
80
90
100
VRRM
VRWM
VR
SPD0801SMS
SPD0901SMS
SPD1001SMS
Peak Repetitive Reverse Voltage and DC
Blocking Voltage
Volts
Average Rectified Forward Current
1
IO
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TA=25°C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO, allow junction to
40
IFSM
reach equilibrium between pulses, TA=25°C)
-55 to +125
°C
Operating and Storage Temperature
TOP & Tstg
Junction to Lead, L=3/8”
Maximum Thermal Resistance
46
20
RθJL
RθJE
°C/W
Junction to End
NOTES:
Axial Leaded
Surface Mount Square Tab (SMS)
1/ For ordering information, price, and availability,
contact factory.
2/ Screening based on MIL-PRF-19500. Screening
flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0115B
DOC
SPD0801 – SPD1001SMS
and
SPD0801SMS - SPD1001SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
Instantaneous Forward Voltage Drop
(IF = 0.5ADC, TA = 25°C, 300 μs Pulse)
(IF = 1ADC, TA = 25°C, 300 μs Pulse)
0.75
0.95
VF
Vdc
Instantaneous Forward Voltage Drop
1.0
200
10
VF
IR
Vdc
µA
(IF = 1ADC, TA = -55°C, 300 μs Pulse)
Reverse Leakage Current
(Rated VR, TA = 25°C, 300 μs minimum Pulse)
Reverse Leakage Current
IR
mA
pF
(Rated VR, TA = 100°C, 300 μs minimum Pulse)
Junction Capacitance
30
CJ
(VR = 10 VDC, TA = 25°C, f = 1 MHz)
Case Outline: (Axial)
DIMENSIONS
DIM
A
B
C
D
MIN
.080”
.160”
.028”
1.00”
MAX
.107”
.205”
.032”
---
ØC
ØA
D
B
D
Case Outline: (SMS)
DIMENSIONS
DIM
A
B
C
D
MIN
.125”
.180”
.022”
.090”
MAX
.135”
.235”
.028”
.110”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0115B
DOC
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