SPD3890R [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-4, HERMETIC SEALED PACKAGE-1;
| 型号： | SPD3890R |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-4, HERMETIC SEALED PACKAGE-1 |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD3889
Thru
SPD3893
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
12 A, 120 nsec, 50-400 V
Fast Recovery Rectifier
Designer’s Data Sheet
Part Number/Ordering Information
__ __
SPD
Features:
│
│
│
│
│
│
│
└
│
└
•
•
•
•
•
•
•
•
•
•
Fast Recovery: 120nsec Maximum
Higher Voltage Devices Available
Low Reverse Leakage Current
Single Chip Construction
PIV to 400 Volts
Hermetically Sealed
High Surge Rating
Low Thermal Resistance
For Reverse Polarity add suffix “R”
TX, TXV, and Space Level Screening
Available
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Voltage
3889 = 50V
3890 = 100V
3891 = 200V
3892 = 300V
3893 = 400V
Maximum Ratings
Symbol
Value
Units
Volts
SPD3889
SPD3890
SPD3891
SPD3892
SPD3893
50
VRRM
VRWM
VR
100
200
300
400
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 100µA
Average Rectified Forward Current
12
200
Io
Amps
(Resistive Load, 60 Hz, Sine Wave, TA = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
Amps
ºC
Operating & Storage Temperature
TOP & TSTG
-65 to +150
Maximum Thermal Resistance
(Junction to Case)
RθJC
2.5
ºC/W
DO-4
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RF0007B
DOC
SPD3889
Thru
SPD3893
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Value
Units
Instantaneous Forward Voltage Drop
(IF =12Adc, TA = 25 ºC, 300μs Pulse)
VF
VF
1.3
VDC
Instantaneous Forward Voltage Drop
(IF =12Adc, TA = -55 ºC, 300μs Pulse)
1.45
VDC
Reverse Leakage Current
(Rated VR, TA = 25 ºC , 300μs minimum pulse)
IR
IR
20
2
μA
mA
nsec
pF
Reverse Leakage Current
(Rated VR, TA = 100 ºC , 300μs minimum pulse)
Reverse Recovery Time
(IF = 500 mA, IR = 1 Amp, IRR = 250 mA, TA = 25 ºC)
tRR
CJ
120
300
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
CASE OUTLINE: DO-4
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RF0007B
DOC
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