SPD4963-2 [SSDI]
1 AMP 550 - 800 VOLTS 130 nsec FAST RECOVERY RECTIFIER; 1 AMP 550 - 800伏130纳秒的快速恢复整流
| 型号： | SPD4963-2 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 1 AMP 550 - 800 VOLTS 130 nsec FAST RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD4963-1 thru SPD4963-3
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
550 – 800 VOLTS
130 nsec
FAST RECOVERY
RECTIFIER
Designer’s Data Sheet
FEATURES:
• Fast Recovery: 130 nsec maximum
• PIV up to 800 Volts
• Low Reverse Leakage Current
• Hermetically Sealed
• Single Chip Construction
• High Surge Rating
Axial
• Low Thermal Resistance
• TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
DC Blocking Voltage
Symbol
VR
Value
500
600
600
Units
Volts
SPD4963-1
SPD4963-2
SPD4963-3
SPD4963-1
SPD4963-2
SPD4963-3
550
670
800
Peak Repetitive Reverse Voltage
VBR
IO
Volts
Average Rectified Forward Current
1
Amps
(Resistive Load, 60 Hz, Sine Wave, TA=25oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO; Allow
junction to reach equilibrium between pulses; TA=25oC)
IFSM
TOP & Tstg
RθJL
20
-65 to +175
40
Amps
oC
Operating and Storage Temperature
Maximum Thermal Resistance
oC/W
Junction to Lead, L = 0.375”
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RC0051B
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SPD4963-1 thru SPD4963-3
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
VF1
Min
Max
1.30
1.30
1.35
Unit
SPD4963-1
SPD4963-2
SPD4963-3
––
––
––
Instantaneous Forward Voltage Drop
Volts
(IF = 1 ADC, TA = 25°C, 300 - 500µsec Pulse)
Instantaneous Forward Voltage Drop
––
Volts
Volts
ALL
VF2
10.0
(IF = 60 ADC, TA = 25°C, 50 - 500µsec Pulse)
SPD4963-1
SPD4963-2
SPD4963-3
550
670
800
––
––
––
Reverse Breakdown Voltage
VBR
(IR = 100 µADC, TA = 25°C, 300µsec min Pulse)
TA = 25oC
IR1
IR2
2
1
Reverse Leakage Current
––
––
µA
TA = 150oC
(Rated VR, 300µsec min Pulse)
mA
Storage Charge
––
––
QS
trr
30
nC
ns
(IF = 100 mA, TA = 25oC)
Reverse Recovery Time
130
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)
DIM
MIN
--
--
0.027”
1.00”
MAX
0.120”
0.250”
0.033”
––
Case Outline:
A
B
C
D
NOTES:
Consult manufacturing for operating curves.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RC0051B
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
相关型号：
SPD49S
Rectifier Diode, 1 Phase, 1 Element, 1.0006A, 75V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
©2020 ICPDF网 联系我们和版权申明