SPD5622SMSTX [SSDI]
1 AMP 200 - 1000 VOLTS STANDARD RECOVERY STANDARD RECOVERY; 1 AMP 200 - 1000伏特标准恢复标准恢复
| 型号： | SPD5622SMSTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 1 AMP 200 - 1000 VOLTS STANDARD RECOVERY STANDARD RECOVERY |
| 文件： | 总2页 (文件大小：1144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD5614 thru SPD5622
SPD5614SM thru SPD5622SM
SPD5614SMS thru SPD5622SMS
Solid State Devices, Inc.
14701Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
1 AMP
Part Number/Ordering Information 1/
200 ─ 1000 VOLTS
STANDARD RECOVERY
RECTIFIER
SPD
___ ___
___
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
FEATURES:
Fast Recovery: 5 μsec Maximum
PIV 200 to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed
Single Chip Construction
High Surge Rating
Low Thermal Resistance
Replaces 1N5614 to 1N5622
TX, TXV, and Space Level Screening Available2/
S = S Level
•
•
•
•
•
•
•
•
•
Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
Voltage/Family
5614 = 200V
5616 = 400V
5618 = 600V
5620 = 800V
5622 = 1000V
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SPD5614
SPD5616
SPD5618
SPD5620
SPD5622
VRRM
200
400
600
800
1000
VRWM
Volts
VR
IO
Average Rectified Forward Current
1
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TA=25oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO,
IFSM
30
allow junction to reach equilibrium between pulses, TA=25oC)
Operating and Storage Temperature
TJ & Tstg
-65 to +175
oC
Thermal Resistance Junction to Leads, L = ⅜″
RθJL
RθJE
35
30
oC/W
Axial
Surface Mount Round Tab (SM)
Surface Mount Square Tab (SMS)
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00011D
DOC
SPD5614 thru SPD5622
SPD5614SM thru SPD5622SM
SPD5614SMS thru SPD5622SMS
Solid State Devices, Inc.
14701Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Value
Unit
Instantaneous Forward Voltage Drop
VF
1.0
Volts
(IF = 1 Amp, TA = 25oC, 300-500 μs Pulse)
Instantaneous Forward Voltage Drop
VF
IR
1.2
2
Volts
μA
(IF = 1 Amp, TA = -55oC, 300-500 μs Pulse)
Reverse Leakage Current
(Rated VR, TA = 25oC, 300 μs Pulse minimum)
Max Reverse Leakage Current
IR
200
20
5
μA
(Rated VR, TA = 100oC, 300 μs Pulse minimum)
Max Junction Capacitance
CJ
trr
pF
(VR =10 VDC, TA = 25oC, f= 1 MHz)
Reverse Recovery Time
μsec
(IF =500 mA, IR =1 A, IRR =250 mA, TA = 25oC)
CASE OUTLINE: AXIAL
DIMENSIONS
DIM
MIN
---
MAX
A
.150"
.180"
.033"
---
B
C
D
---
.027"
1.00"
CASE OUTLINE: (SM) SURFACE MOUNT ROUND TAB
CASE OUTLINE: (SMS) SURFACE MOUNT SQUARE TAB
DIMENSIONS
DIMENSIONS
DIM
MIN
.125”
.205”
.022”
.002”
MAX
.135”
.255”
.028”
---
DIM
MIN
.095”
.185”
.010”
MAX
.105”
.205”
.022”
A
B
C
D
A
B
C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00011D
DOC
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