SPD5712TX [SSDI]
Rectifier Diode, Schottky, 1 Element, 0.075A, 20V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SPD5712TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.075A, 20V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD5711
and
SPD5712
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
33 - 75 mA
SCHOTTKY SMALL SIGNAL DIODE
16 – 50 VOLTS
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPD5711
__ __ __
SPD5712
└
│
│
│
│
│
└
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
│
│
│
└
Features:
TXV = TXV Level
•
•
•
•
Extremely Low Turn On Voltage
Ultra Fast Switching
Hermetically Sealed
Replacement for 1N5711 and 1N5712 with
Improved Thermal Resistance
Primary Intended for High Level UHF/VHF
Detection and Pulse Applications with a
Broad Dynamic Range
S = S Level
Package __ = Axial
SMS = Square Tab Surface
Mount
•
•
Family/Rating SPD5711 = 50V, 33mA
SPD5712 = 16V, 75mA
Axial or Square Tab Surface Mount Versions
Available
TX, TXV, and S-Level Screening Available2/
Maximum Ratings 3/
Symbol
Value
Units
Volts
VRRM
VRWM
VR
Peak Repetitive Reverse and
DC Blocking Voltage
SPD5711
SPD5712
70
20
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TC = 25 °C)
SPD5711
SPD5712
33
75
IO
mAmps
°C
Operating & Storage Temperature
Maximum Thermal Resistance,
TOP & TSTG
-65 to+150
R0JL
R0JE
ºC/W
Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
250
200
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum ratings and electrical characteristics @ 25°C unless otherwise specified.
Axial Package:
Square Tab Surface Mount (SMS) Package:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0008E
DOC
SPD5711
and
SPD5712
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD5711
SPD5712
Min Max
Electrical Characteristics 3/
Symbol
VBR
Units
VDC
Min
Max
Blocking Reverse Voltage
(IR = 10 μA, TA = 25°C, 300 – 500 μs Pulse)
70
––
20
––
VF1
VF2
VF3
VF4
VF5
VF6
––
––
––
––
––
––
––
0.41
1.0
––
0.55
1.0
––
––
––
––
––
––
––
––
0.41
––
1.0
0.55
––
1.0
150
IF = 1 mADC
IF = 15 mADC
IF = 35 mADC
Instantaneous Forward Voltage Drop
(TA = 25°C, 300 – 500 μs Pulse)
VDC
VDC
IF = 1 mADC
IF = 15 mADC
IF = 35 mADC
Instantaneous Forward Voltage Drop
(TA = -55 ºC, 300 – 500 μs Pulse)
Reverse Leakage Current
(TA = 25 ºC, 300 μs Minimum Pulse)
Reverse Leakage Current
(TA = 100 ºC, VR = Rated, 300 μs Minimum Pulse)
Junction Capacitance
200
IR1
IR2
CJ
nA
μA
pF
SPD5711: Vr = 50V
SPD5712: Vr = 16V
––
––
200
2.0
––
––
150
2.0
(VR = 0 VDC, VSIG = 50 mVPK, TA = 25ºC, f = 1MHz)
Axial Case Outline:
DIMENSIONS
DIM
A
MIN.
MAX.
0.068” 0.076”
0.150” 0.170”
B
C
1.00”
1.50”
Note: Lead Diameter is not controlled within 0.050” of the diode body.
D
0.014” 0.022”
Square Tab Surface Mount (SMS) Case Outline:
DIMENSIONS
DIM
A
MIN.
MAX.
0.095
0.080”
”
0.220
”
B
0.205”
C
D
0.22”
0.28”
---
0.001”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0008E
DOC
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