SPD5818SMTXV [SSDI]
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SPD5818SMTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD5817SM
Thru
SPD5819SM
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
20 ─ 40 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information1/
SPD __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
FEATURES:
•
•
Extremely Low Forward Voltage Drop
Hermetically Sealed Surface Mount
Package
For High Efficiency Applications
High Surge Capability
Axial Lead Versions Available
TX, TXV, or Space Level Screening
Available2/
-S = S Level
Package Type
SM = Surface Mount Round Tab
•
•
•
Voltage/Family
5817 = 20V
5818 = 30V
5819 = 40V
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage and DC
Blocking Voltage
SPD5817SM
VRRM
VRWM
VR
20
30
40
Volts
SPD5818SM
SPD5819SM
Average Rectified Output Current
(Resistive Load, 60Hz, Sine Wave, TA=25°C)
Peak Surge Current 3/
IO
1
Amps
Amps
IFSM
25
(8.3 ms Pulse, Half Sine Wave,
superimposed on IO, allow junction to reach
equilibrium between pulses, TA=25°C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
TOP & TSTG
RθJE
-55 to +125
40
°C
°C/W
NOTES:
1/ For ordering information, Price, and Availability- Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request
3/ Unless otherwise specified, all electrical ratings/characteristics @ 25°C.
SURFACE MOUNT ROUND TAB
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0111M
DOC
SPD5817SM
Thru
SPD5819SM
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
SYMBOL
MAXIMUM UNIT
Instantaneous Forward Voltage
Drop
(IF = 1 Adc, TA = 25°C, 300-500μs
Pulse)
SPD5817SM
SPD5818SM
SPD5819SM
0.55
0.65
0.70
VF1
Vdc
Instantaneous Forward Voltage
Drop
(IF = 1 Adc, TA = -55°C, 300-500μs
Pulse)
SPD5817SM
SPD5818SM
SPD5819SM
0.57
0.67
0.72
VF2
Vdc
Reverse Leakage Current
(Rated VR, TA = 25°C, 300μs Pulse Minimum)
IR1
IR2
CJ
0.50
10
mA
mA
pF
Reverse Leakage Current
(Rated VR, TA = 100°C, 300μs Pulse Minimum)
Junction Capacitance
(VR = 5 Vdc, TA = 25°C, f = 1 MHz)
120
DIMENSIONS
Minimum
Case Outline- Surface Mount Round Tab*
Dimension
Maximum
.105”
ØA
B
.090”
.189”
.016”
.205”
C
.022”
Note: Dimensions are prior to solder dipping
* For information on curves, contact the Factory Representative for Engineering Assistance.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0111M
DOC
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