SPD630TX [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 6A, 300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SPD630TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 6A, 300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 功效 二极管 |
| 文件： | 总2页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD605 thru SPD640
and
SPD605SMS thru SPD640SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
6.0 AMPS
Designer’s Data Sheet
Part Number/Ordering Information 1/
50 ─ 400 VOLTS
40 ns HYPERFAST RECOVERY
RECTIFIER
__ __ __
SPD
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
FEATURES:
•
•
•
•
•
•
•
Hyper Fast Reverse Recovery: 40ns Maximum 4/
PIV to 400 Volts
S = S Level
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Hermetically Sealed
Low Forward Voltage Drop
Void Free Chip Construction
For High Efficiency Applications
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available2/
Voltage/Family
605 = 50V
•
Replacement for: 1N 5807, US thru 1N5811, US
610 = 100V
620 = 200V
630 = 300V
640 = 400V
MAXIMUM RATINGS 3/
RATING
SYMBOL VALUE
UNIT
SPD605
SPD610
SPD620
SPD630
SPD640
50
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
100
200
300
400
Volts
And
DC Blocking Voltage
6.0
Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C )
Amps
Amps
IO
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
125
IFSM
TJ and
TSTG
-65 to +175
Operating & Storage Temperature
°C
Junction to Lead for Axial, L =.375"
Thermal Resistance
RθJL
RθJE
20
12
°C/W
Junction to End Tab for Surface Mount
NOTES:
Axial Leaded
SMS
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0087F
DOC
SPD605 thru SPD640
and
SPD605SMS thru SPD640SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
MAX
0.975
1.08
VF1
VF2
IF = 6.0 Adc , TA = +25°C
IF = 6.0 Adc , TA = -55°C
Forward Voltage Drop
( pulsed )
Vdc
μA
mA
20
1
Rated VR, TA = +25°C
Rated VR, TA =+100°C
IR1
IR2
Reverse Leakage Current
( pulsed )
Junction Capacitance
VR = 10 Vdc, f = 1MHz, TA = 25°C
100
40
CJ
trr
pF
ns
Reverse Recovery Time
IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
Package Outlines:
DIMENSIONS (inches)
DIMENSIONS (inches)
DIM.
A
DIM.
A
Minimum
.130
Maximum
.170
Minimum
.172
Maximum
.180
B
C
D
B
C
D
---
.038
1.000
.240
.042
---
.200
.020
.002
.290 (SMS)
.035
---
SMS
AXIAL
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0087F
DOC
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