SPD6556SMSTX [SSDI]
6AMPS 1300VOLTS 5 nsec STANDARD RECOVERY RECTIFIER; 6AMPS 1300VOLTS 5纳秒标准恢复整流器型号: | SPD6556SMSTX |
厂家: | SOLID STATES DEVICES, INC |
描述: | 6AMPS 1300VOLTS 5 nsec STANDARD RECOVERY RECTIFIER |
文件: | 总2页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPD6557 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
6 AMPS
1300 VOLTS
Designer’s Data Sheet
5 μsec
___
│
│
│
│
│
│
│
│
___ ___
STANDARD RECOVERY
SPD65
│
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
RECTIFIER
│
│
│
│
└
FEATURES:
S = S Level
•
•
•
•
•
•
•
•
•
•
Standard Recovery: 5 μsec maximum
PIV up to 1500 Volts
Low Reverse Leakage Current
Hermetically Sealed
Single Chip Construction
High Voltage Replacement for 1N5553 &1N5554
Low Thermal Resistance
Available with 0.040” diameter leads
TX, TXV, and Space Level Screening Available2/
Fast Recovery Versions Available.
Contact Factory.
Package Type
___ = Axial
SMS = Surface Mount Square Tab
Family/Voltage
54 = 800 V
└
55 = 1000 V
56 = 1200 V
57 = 1300 V
•
For higher voltages-See SSDI p/n SDR6W
MAXIMUM RATINGS
Symbol
Value
Units
Volts
SPD6557
SPD6556
SPD6555
SPD6554
1300
1200
1000
800
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
IO
6
Amps
(Resistive Load, 60 Hz, Sine Wave, TA=25oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to
IFSM
150
Amps
oC
reach equilibrium between pulses, TA=25oC)
Operating and Storage Temperature
TOP & Tstg
-65 to +175
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount
RθJL
RθJE
8
4
oC/W
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial
Surface Mount
Square Tab
(SMS)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0086E
DOC
SPD6557 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
TA = 25oC
TA = -55oC
Instantaneous Forward Voltage Drop
VF1
VF2
––
––
1.15
1.30
Volts
Volts
(IF = 6 Amps, TA = 25oC, 300μsec Pulse)
TA = 25oC
Reverse Leakage Current
(At Rated VR, 300μsec pulse minimum)
––
––
IR1
IR2
5.0
50
μA
μA
TA = 100oC
SPD6557
SPD6556
SPD6555
SPD6554
1300
1200
1000
800
––
––
––
––
Breakdown Voltage
VBR
Volts
(IR = 50 μA, TA = 25oC)
Junction Capacitance
––
––
CJ
trr
50
5
pF
(VR = 10 VDC, TA = 25oC, f = 1 MHz)
Reverse Recovery Time
μs
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)
DIM
MIN
MAX
Case Outline: (Axial)
A
B
C
D
––
0.215”
0.300”
0.053”
––
0.210”
0.047”
1.00”
DIM
A
MIN
MAX
0.230”
0.350”
0.030”
––
Case Outline: (SMS)
0.195”
0.260”
0.020”
0.002”
B
C
D
Note: Dimensions prior to soldering.
NOTES:
Consult manufacturing for operating curves.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0086E
DOC
相关型号:
SPD6557A
Rectifier Diode, 1 Phase, 1 Element, 6A, 1500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
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