SPMR600-01 [SSDI]
SPACE LEVEL SHUNT MODULE; 空间层次旁路模块
| 型号： | SPMR600-01 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | SPACE LEVEL SHUNT MODULE |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPMR600-01
Solid State Devices, Inc.
SPACE LEVEL
SHUNT MODULE
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
FEATURES:
Designer’s Data Sheet
Part Number/Ordering Information 1/
•
•
Space Level Power Supply Applications
Compact and Rugged Construction Offering Weight
and Space Savings
SPMR600-01
__
└ Screening 2/
•
Very Low Mechanical Stress and Thermal
Resistance
__ = Not Screened
TX = TX Level
TXV = TXV
•
•
•
Hermetic Sealed Discrete Elements
Excellent Thermal Management
TX, TXV, and Space Level Screening Available
S = S Level
150V Schottky section:
Peak Surge Reverse Voltage
Peak Repetitive Reverse Voltage
Maximum Ratings
Symbol
VRSM
Value
150
Units
V
V
VRRM
150
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
IO
ID2
40
A
Non-repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave)
@ TC = 25°C
@ 1.5 x VRRM
IFSM
IAR
600
0.6
0.6
A
A
Max. Avalanche repetitive reverse current
Non-repetitive Avalanche Energy
@ IAS= 6A
L= 0.1 mH
EAS
mJ
Total Power Dissipation
@ TC = 25ºC
PD
TBD
W
°C
Operating & Storage Temperature
TOP & TSTG
-55 to+175
150V Schottky section: Electrical Characteristics
Symbol
Min Typ
Max
Units
IF = 10Adc
VF1
VF2
VF3
VF4
VF5
VF6
VF7
VF8
VF9
––
––
––
––
––
––
––
––
––
––
0.650
0.715
0.775
0.500
0.560
0.640
0.800
0.840
0.925
0.75
0.80
0.85
0.64
0.68
0.75
0.90
0.96
1.03
Instantaneous Forward Voltage Drop
(Pulsed, TA = 25 ºC)
IF = 20Adc
IF = 40Adc
IF = 10Adc
IF = 20Adc
IF = 40Adc
IF = 10Adc
IF = 20Adc
IF = 40Adc
V
V
V
Instantaneous Forward Voltage Drop
(Pulsed, TA = 125 ºC)
Instantaneous Forward Voltage Drop
(Pulsed, TA = -55 ºC)
Reverse Leakage Current
(Pulsed, TA = 25 ºC)
Reverse Leakage Current
(Pulsed, TA = 125 ºC)
Reverse Leakage Current
(Pulsed, TA = 150 ºC)
Junction Capacitance
(TA = 25ºC, f = 1MHz)
VR = 150 V
VR = 150 V
VR = 150 V
VR = 10V
IR1
IR2
IR3
CJ
10
5
500
50
μA
mA
mA
pF
––
––
10
––
––
1000
1250
Notes: 1/ For ordering information, price, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC
SPMR600-01
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
250V MOSFET section: Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
VDSS
250
V
continuous
transient
±20
±30
Gate – Source Voltage
VGS
V
A
@ TC = 25ºC
@ TC = 125ºC
ID1
ID2
85
70
Max. Continuous Drain Current (package limited)
Pulsed Drain (Instantaneous) Current (Tj limited)
Max. Avalanche current
@ TC = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
ID3
IAR
110
25
A
A
Single / Repetitive Avalanche Energy
Total Power Dissipation
EAS
1000
mJ
W
PD
250
Operating & Storage Temperature
TOP & TSTG
-55 to +150
ºC
250V MOSFET section: Electrical Characteristics 4/
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250μA
BVDSS
250
––
––
V
Drain to Source On State Resistance
VGS = 10V, ID = 55A, Tj= 25oC
V
––
––
24
45
28
––
RDS(on)
mΩ
GS = 10V, ID = 55A, Tj=125oC
DS = VGS, ID = 1 mA, Tj= 25oC
V
2.5
––
––
3.0
4.2
1.5
4.5
––
––
Gate Threshold Voltage
V
DS = VGS, ID = 1 mA, Tj= -55oC
VGS(th)
V
V
DS = VGS, ID = 1 mA, Tj= 125oC
GS = ±20V, Tj= 25oC
GS = ±20V, Tj= 125oC
V
V
––
––
10
30
±200
––
Gate to Source Leakage
IGSS
IDSS
gfs
nA
V
DS = 250V, VGS = 0V, Tj = 25oC
––
––
0.01
10
5
250
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
V
DS = 250V, VGS = 0V, Tj = 125oC
VDS = 10V, ID = 55A, Tj = 25oC
VGS = 10V
50
100
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
––
––
––
160
40
50
––
––
––
nC
VDS = 125V
ID = 25A
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
V
GS = 15V
DS = 125V
ID = 55A
td(on)
tr
td(off)
tf
––
––
––
––
20
30
60
30
––
––
––
––
nsec
V
RG = 2.0Ω, pw= 3us
Diode Forward Voltage
IF = 55A, VGS = 0V
VSD
––
0.9
1.2
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
IRM(rec)
Qrr
––
––
––
175
27
2.5
––
––
––
nsec
A
μC
IF = 55A, di/dt = 250A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
Ciss
Coss
Crss
––
––
––
9400
850
60
––
––
––
VDS = 25V
pF
f = 1 MHz
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC
SPMR600-01
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
CASE OUTLINE: ASPM
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC
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