SPR2KUFS [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;型号: | SPR2KUFS |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 功效 二极管 |
文件: | 总2页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPR2KUF thru SPR2NUF
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
REVERSE TRANSIENT RATED
OPTIMIZED FOR USE IN T.W.T. APPLICATIONS
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPR2___
__ __ __
2 Amp
2/
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
ULTRA FAST RECTIFIER
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
800-1200 Volts
50 nsec
S = S Level
Package Type
FEATURES:
__ = Axial
•
•
•
•
•
•
•
•
Ultra Fast Reverse Recovery Time: 50 nsec Max
SMS = Surface Mount Square Tab
PIV to 1200 Volts
Reverse Transient Rated: 1 Amp (Typ 1200Wpk
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
Reverse Recovery
UF = Ultra Fast Recovery
Device Type ( VRWM )
K = 800V
M = 1000V
Solid Silver Leads for High Thermal
Conductivity
N = 1200V
•
TX, TXV, and S-Level Screening Available2/
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
SPR2K
SPR2M
SPR2N
800
1000
1200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Volts
Average Rectified Forward Current
2
IO
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
Peak Surge Current
(8.3ms pulse, half sine wave superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
IFSM
25
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°C
Maximum Thermal Resistance
RθJL
RθJE
Junction to Leads, L=3/8”(Axial)
Junction to End Tab (SMS)
38
7.0
°C/W
NOTES:
SMS
Axial Leaded
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0009D
DOC
SPR2KUF thru SPR2NUF
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
CHARACTERISTICS
SYMBOL
MAX
UNIT
Instantaneous Forward Voltage Drop
(TA = 25°C, 300 μs Pulse)
IF = 0.75A
IF = 2A
2.1
3.1
VF
Vdc
Reverse Leakage Current
(VR = rated, 300-500 μs Pulse Minimum , TA = 25°C)
IR1
IR2
CJ
trr
5
μA
μA
pf
Maximum Reverse Leakage Current
(VR = 80% rated, 300 μs Pulse Minimum , TA = 125°C)
120
22
Junction Capacitance
(TA = 25°C , f = 1MHz, VR = 10V)
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C)
50
nsec
A
Reverse Energy Test
(Half sine wave, tp = 600ns @ 50% of IP)
1
IPK
(Minimum)
SMS
AXIAL
C
A
ØC
ØA
D
B
D
A
D
B
DIM
A
MIN
---
NOM
---
MAX
MIN
.140”
.190”
.019”
.001”
MAX
.150”
.230”
.028”
---
.140”
.180”
---
B
---
---
C
---
.030”
---
D
.97”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0009D
DOC
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