SRM10UF [SSDI]
20 AMP 600 - 1200 VOLTS 75 ns ULTRA FAST RECTIFIER; 20 AMP 600 - 1200 VOLTS 75 ns的超快速整流器
| 型号： | SRM10UF |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 20 AMP 600 - 1200 VOLTS 75 ns ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRM6UF, SMS, & BTR
thru
SOLID STATE DEVICES, INC.
SRM12UF, SMS, & BTR
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
600 - 1200 VOLTS
75 ns
Designer's Data Sheet
FEATURES:
ULTRA FAST
RECTIFIER
• Replaces DO-4 and DO-5
• Ultra Fast Recovery
• PIV to 1200 Volts
• Low Reverse Leakage
1/
• Hermetically Sealed Void-Free Construction
• Monolithic Single Chip Construction
• High Surge Rating
• Low Thermal Resistance
• Equivalent to 1N6690 - 1N6693.
• TX, TXV and Space Level Screening Available
1/ PIND Testing not required on Void-Free Devices per
MIL-PRF-19500
SYMBOL
VALUE
UNITS
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SRM6UF
600
800
1000
1200
V
RRM
SRM8UF
SRM10UF
SRM12UF
V
RWM
Volts
V
R
Average Rectified Forward Current
Io
20
Amps
(Resistive Load, 60Hz, Sine Wave, T = 100 oC
C
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
I
375
Amps
oC
FSM
junction to reach equilibrium between pulses, T = 25oC)
A
Operating and Storage Temperature
Top & Tstg
-65 TO +175
Maximum Thermal Resistance
Junction to Case
Axial Lead, L = 3/8" (
)
R
θJL
R
θJE
R
θJC
3.0
2.5
1.0
Square Tab (SMS)
Button (BTR)
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0129E
SRM6UF, SMS, & BTR
thru
SRM12UF, SMS, & BTR
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SYMBOL
MAXIMUM
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
T = 25oC
V
1.9
2.2
A
F1
(I = 20A , 300 - 500 µsec Pulse)
F
DC
V
DC
T = -55oC
V
F2
A
Reverse Leakage Current
T = 25oC
I
10
2.0
µA
mA
A
R1
(Rated V , 300µsec pulse minimum)
R
T = 100oC
I
R2
A
Junction Capacitance
C
250
75
pF
J
(V = 10V , T = 25oC, f = 1MHz)
R
DC
A
Reverse Recovery Time
(I = 500 mA, I = 1 A, I = 250 mA, T = 25oC)
t
nsec
RR
F
R
RR
A
CASE OUTLINE: Axial Leaded (
)
CASE OUTLINE:
Surface Mount Square Tab (SMS)
CASE OUTLINE:
Surface Mount Button (BTR)
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