SRM10 [SSDI]
20 AMP 500 - 1000 VOLTS 5 usec STANDARD RECOVERY RECTIFIER; 20 AMP 500 - 1000伏特5微秒标准恢复整流器
| 型号： | SRM10 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 20 AMP 500 - 1000 VOLTS 5 usec STANDARD RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SRM5
thru
SRM10
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
20 AMP
500 - 1000 VOLTS
5 µsec
Designer's Data Sheet
STANDARD RECOVERY
RECTIFIER
FEATURES:
• Replaces DO-4 or DO-5
• Standard Recovery: 5 µsec maximum
• PIV to 1000 Volts
• Low Reverse Leakage Current
• Hermetically Sealed Void-Free Construction
• Monolithic Single Chip Construction
• High Surge Rating
AXIAL
1/
• Low Thermal Resistance
• Available in Surface MountVersion
• Equivalent to 5961-94022.
• TX, TXV and Space Level ScreeningAvailable
1/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500
SYMBOL
VALUE
UNITS
Volts
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SRM5
SRM6
SRM7
SRM8
SRM9
SRM10
500
600
700
800
900
1000
V
V
RRM
RWM
V
R
Average Rectified Forward Current
Io
20
Amps
(Resistive Load, 60Hz, Sine Wave, T = 25 oC
A
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
I
375
-65 TO +175
3
Amps
oC
FSM
junction to reach equilibrium between pulses, T = 25oC)
A
Operating and Storage Temperature
Top & Tstg
R
oC/W
Maximum Thermal Resistance
Junction to Lead, L = 3/8"
θJL
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046E
SRM5
thru
SRM10
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SYMBOL
MAXIMUM
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
T = 25oC
V
1.05
1.15
(I = 20A T = 25 oC, 300µsec min pulse)
A
F1
F
DC,
A
V
DC
T = -55oC
V
F2
A
Reverse Leakage Current
T = 25oC
I
2.0
500
A
R1
(Rated V , 300µsec min pulse)
R
µA
pF
T = 100oC
I
R2
A
Junction Capacitance
C
250
5
(V = 10V , T = 25oC, f = 1MHz)
J
R
DC
A
Reverse Recovery Time
t
µsec
(I = 500 mA, I = 1 A, I = 250 mA, T = 25oC)
RR
F
R
RR
A
CASE OUTLINE: AXIAL
.150
MAX
Ø.060±.003
Ø.310 MAX
.500 MIN
.500 MIN
Ø.210
Ø.250
TOLERANCES:
(UNLESS OTHERWISE SPECIFIED)
.XX ±.03
.XXX ±.010
POWER DERATINGCURVE
FORWARD VOLTAGE ( Vf )
109oC
1000
100
10
100
80
60
40
20
0
1
0
25
50
75
100
125
150
175
200
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
CASE TEMPERATURE (oC)
VOLTAGE ( V )
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