SRM3HF [SSDI]
Hyper Fast Rectifier; HYPER快速整流
| 型号： | SRM3HF |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Hyper Fast Rectifier |
| 文件： | 总2页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SRM3HF thru SRM4HF
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
300-400 Volts
40 nsec
Designer’s Data Sheet
Part Number / Ordering Information 1/
Hyper Fast Rectifier
SRM__ HF __ __
Screening2/
└
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
│
└
│
│
│
│
└
Features:
•
•
•
•
•
•
•
•
•
•
•
Replaces DO-4 and DO-5 (1N5816,1N6306)
High Current/ Voltage Version of 1N5811
Hyper Fast Recovery
S = S Level
Package Type
PIV to 400 Volts
__ = Axial
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction3/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Versions
Equivalent to 1N6688-1N6689
SMS = Surface Mount Square Tab
BTR = Button
Voltage 3 = 300 V
4 = 400 V
•
TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
SRM3HF
SRM4HF
300
400
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave, TA=25◦C)
IO
Amps
20
Peak Surge Current
IFSM
Amps
oC
475
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, TA=25oC)
Operating and Storage Temperature
Maximum Thermal Resistance
(Axial – Junction to Lead, L=3/8”)
(SMS – Junction to End Tab)
(Button – Junction to Case)
Top & Tstg
-65 to +175
RθJL
RθJE
RθJC
3.0
2.5
1.0
Axial ( )
Square Tab (SMS)
oC/W
Button (BTR)
Notes:
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Modified MIL-PRF-19500 Screening Flow – Consult Factory.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
Axial
SMS
Button
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDIprior to release.
DATA SHEET #: RH0165F
DOC
SRM3HF thru SRM4HF
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol Max
Unit
Vdc
Instantaneous Forward Voltage Drop
VF1
VF2
IR1
IR2
CJ
trr
1.05
(IF = 20Adc, 500 μsec Pulse, TA = 25oC)
Instantaneous Forward Voltage Drop
Vdc
(IF = 20Adc, 300 μsec Pulse, TA = -65oC)
1.2
Reverse Leakage Current
100
μA
mA
pF
(Rated VR, 300 μsec Pulse Minimum, TA = 25oC)
Reverse Leakage Current
10
350
40
(Rated VR, 300 μsec Pulse Minimum, TA = 100oC)
Junction Capacitance
(VR =10 VDC, f = 1MHz, TA = 25oC)
Reverse Recovery Time
nsec
(IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC)
CASE OUTLINES:
TOLERANCES
(UNLESS SPECIFIED)
.XX ± .03”
Axial ( )
.XXX ± .010”
Square Tab (SMS)
Button (BTR)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDIprior to release.
DATA SHEET #: RH0165F
DOC
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