SRM9TX [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SRM9TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRM5
thru
SRM10
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMPS
500 - 1000 VOLTS
5 μsec
Designer’s Data Sheet
Part Number/Ordering Information 1/
STANDARD RECOVERY
RECTIFIER
SRM __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
└
└
FEATURES:
•
•
•
•
•
•
•
•
•
•
•
Replace DO-4 or DO-5
Voltage
5 = 500V
6 = 600V
7 = 700V
8 = 800V
9 = 900V
10 = 1000V
Standard Recovery: 5μsec maximum
PIV to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Version
Equivalent to 5961-94022
TX, TXV, and Space Level Screening Available2/
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM5
SRM6
SRM7
SRM8
SRM9
SRM10
500
600
700
800
900
1000
VRRM
VRWM
VR
Average Rectified Forward Current
IO
20
Amps
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow
IFSM
375
Junction to Reach Equilibrium Between Pulses, TA = 25oC)
Operating and Storage Temperature
TOP & Tstg
RθJL
-65 to +175
3
oC
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
oC/W
NOTES:
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
Axial
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046G
DOC
SRM5
thru
SRM10
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
VDC
TA = 25oC
TA = -55oC
VF1
VF2
1.05
1.15
Instantaneous Forward Voltage Drop
(IF = 20 ADC, 300μsec min pulse)
––
––
TA = 25oC
IR1
IR2
2.0
500
Reverse Leakage Current
(Rated VR, 300 μsec min pulse)
––
––
μA
pF
TA = 100oC
Junction Capacitance
––
––
CJ
trr
250
5
(VR =10 VDC, TA = 25oC, f = 1 MHz)
Reverse Recovery Time
μsec
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)
Case Outline: AXIAL
.150
MAX
Ø.060±.003
Ø.310 MAX
.500 MIN
.500 MIN
Ø.210
Ø.250
TOLERANCES:
(UNLESS OTHERWISE SPECIFIED)
.XX ±.03
.XXX ±.010
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046G
DOC
相关型号：
SRM9TXV
Rectifier Diode, 1 Phase, 1 Element, 20A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
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