SSG55N60NTX [SSDI]

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN;
SSG55N60NTX
型号: SSG55N60NTX
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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文件: 总3页 (文件大小:195K)
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SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60P

1.65 V saturation ultrafast IGBT

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7 SSDI

SSG55N60P

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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4 SSDI

SSG55N60P

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PTX

暂无描述

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0 SSDI

SSG55N60PTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60Z

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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7 SSDI

SSG55N60Z

1.65 V saturation ultrafast IGBT

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13 SSDI

SSG55N60ZS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI

SSG55N60ZTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI

SSG55N60ZTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI

SSG55N60ZTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

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0 SSDI

SSG-5H

Subminiature Basic Switch

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13 OMRON