SSR10C080MUB [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 800V V(RRM), Silicon Carbide, TO-254AA, TO-254, 3 PIN;
| 型号： | SSR10C080MUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 800V V(RRM), Silicon Carbide, TO-254AA, TO-254, 3 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR10C120 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
10 A / 1200 V
Schottky Silicon Carbide Rectifier
SSR10C __ __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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FEATURES:
Lead Bend Options
__ = Straight Leads
DB = Down Bend
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current: 10 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over Temperature
Small Package Size
TO-257: 3.2 gr (typ); TO-254: 6.3 gr (typ)
TX, TXV, and Space Level Screening Available.
Consult Factory
UB = Up Bend
Package M = TO-254
J = TO-257
Voltage
080 = 800 V
100 = 1000 V
120 = 1200 V
MAXIMUM RATINGS3/
Symbol
Value
Units
SSR10C080
SSR10C100
SSR10C120
800
1000
1200
VRRM
VR
Peak Repetitive and Peak Reverse Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
IO
10
60
Amps
Amps
Peak Surge Current
IFSM
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)
Operating & Storage Temperature
Junction Temperature
TOP & Tstg
TJ
-55 to +250
-55 to +250
oC
oC
Maximum Thermal Resistance
(Junction to Case)
3.0
oC/W
RJC
TO-254 (M)
TO-257 (J)
Notes:
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC. For best results, connect anode pins together.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0080A
DOC
Solid State Devices, Inc.
SSR10C120 Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/
Symbol
Min
Typ
Max
Units
VDC
IF = 2.0 A
IF = 5.0 A
IF = 10 A
VF1
VF2
VF3
––
––
––
1.06
1.25
1.53
1.20
1.50
1.80
Instantaneous Forward Voltage Drop
(TA=25ºC, 300 - 500 sec pulse)
Instantaneous Forward Voltage Drop
(300 - 500 sec pulse)
VF4
VF5
––
––
1.25
1.45
1.60
1.80
TA= -55ºC, IF = 5 A
TA= 150 ºC, IF = 5 A
VDC
A
A
pF
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 sec pulse minimum)
IR1
IR2
CJ
––
––
––
10
15
50
Reverse Leakage Current
(Rated VR, TA = 150ºC, 300 sec pulse minimum)
250
450
Junction Capacitance
375
(VR = 10V, f = 1MHz, TA = 25oC)
CASE OUTLINE: TO-257 (J)
CASE OUTLINE: TO-254 (M)
PIN ASSIGNMENT
Available Part Numbers:
SSR10C080M, SSR10C080MDB, SSR10C080MUB
SSR10C100M, SSR10C100MDB, SSR10C100MUB
SSR10C120M, SSR10C120MDB, SSR10C120MUB
SSR10C080J, SSR10C080JDB, SSR10C080JUB
SSR10C100J, SSR10C100JDB, SSR10C100JUB
SSR10C120J, SSR10C120JDB, SSR10C120JUB
Package
TO-254 (M)
TO-257 (J)
Pin 1
Pin 2
Anode
Anode
Pin 3
Anode
Anode
Cathode
Cathode
Notes:
*Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC. For best results, connect anode pins together.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0080A
DOC
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