SSR10C20 [SSDI]
10A / 300V Schottky Silicon Carbide; 10A / 300V肖特基碳化硅
| 型号： | SSR10C20 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 10A / 300V Schottky Silicon Carbide |
| 文件： | 总2页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
World’s First Silicon Carbide
SSR10C30 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
10A / 300V
Schottky Silicon Carbide
SSR10C 30 S.5 TX
│ │
│
│
│
│
└
└
Screening __ = Not Screened
TV = TX Level
│ │
│ │
│ │
│ │
│ │
│ └
│
TXV= TXV Level
S
= S Level
Package 2/ S.5 = SMD.5
= Cerpack
Features:
G
• World's 1st Hermetic 10A SiC
• High Voltage 300V
• Very High Operating Temperature, 250ºC
• No Recovery Time (tfr or trr)
• High Current Operation, 10A
• Hermetic Packaging
Configuration
└
Voltage 20 = 200 V
30 = 300 V
• TX, TXV, S Level screening available
Maximum Ratings
Symbol
Value
Units
Volts
Amps
Amps
SSR10C20
SSR10C30
VRRM
VRSM
200
300
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Io
10
18
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO)
IFSM
Power Dissipation
PD
15
Watts
ºC
Operating & Storage Temperature
Top & Tstg
-55 to +250
Maximum Thermal Resistance
Junction to Case
RθJC
4.4
ºC/W
1
Cerpack (G)
SMD .5 (S.5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032B
DOC
World’s First Silicon Carbide
SSR10C30 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Typ
Max
Units
Volts
Volts
Volts
µA
Instantaneous Forward Voltage Drop
(Tj = 25ºC, 300 µsec pulse)
If = 5A
If = 10A
Vf1
Vf2
---
---
1.20
1.50
1.32
1.65
Instantaneous Forward Voltage Drop
(Tj = 150ºC, 300 µsec pulse)
If = 5A
If = 10A
Vf3
Vf4
---
---
1.18
1.65
1.28
1.85
Instantaneous Forward Voltage Drop
(Tj = -55ºC, 300 µsec pulse)
If = 5A
If = 10A
Vf5
Vf6
---
---
1.35
1.60
1.45
1.75
Reverse Leakage Current
(Vr = Rated Vr, Tj = 25ºC, 300 µsec min pulse)
Ir1
Ir2
Cj
---
---
---
---
25
100
350
13
100
250
500
---
Reverse Leakage Current
(Vr = Rated Vr, Tj = 150ºC, 300 µsec min pulse)
µA
Junction Capacitance
(Vr=10 Vdc, Tc=25ºC, f=1MHz)
Total Capacitive Charge
(VR = 400V, IF = 5A, di/dt = 200A/µs, TJ = 150ºC)
pF
Qc
nC
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
o
4/ If High Temperature Operation is Desired (> 175 C) Consult Factory for Soldering Consideration.
PIN ASSIGNMENT
Available Part Numbers:
Package
SMD .5 (S.5)
Cerpack (G)
Pin 1
Cathode
Anode
Pin 2
Anode
Anode
Pin 3 (Tab)
Anode
SSR10C20S.5 SSR10C20G
SSR10C30S.5 SSR10C30G
Cathode
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