SSR2009MDBS [SSDI]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 90V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN;
| 型号： | SSR2009MDBS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 90V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMPS
100 VOLTS
SCHOTTKY
RECTIFER
Designer’s Data Sheet
Part Number/Ordering Information 1/
SSR20 __ __ __ __
Screening 2/
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
FEATURES:
PIV: 100 Volts
•
•
•
•
•
•
•
•
•
•
Low Reverse Leakage Current
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Package
Available in Glass or Ceramic Seal Packages
Custom Lead Forming Available
Eutectic Die Attach
Lead Options
__ = Straight Leads,
DB = Bent Down
UB = Bent Up
Package
M = TO-254
Z = TO-254Z
Voltage / Family
08 = 80V
175°C Operating Junction Temperature
TX, TXV, and Space Level Screening
Available
09 = 90V
10 = 100V
MAXIMUM RATINGS3/
Symbol
Value
Unit
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SSR2008M & Z
SSR2009M & Z
SSR2010M & Z
VRRM
VRWM
VR
80
90
100
Volts
Average Rectified Forward Current 1/4/
IO
Amps
20
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
4/
Peak Surge Current
IFSM
TOP & Tstg
RθJC
Amps
°C
300
-65 to +175
1.2
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
Operating and Storage Temperature
Maximum Thermal Resistance4/
(Junction to Case)
°C/W
NOTE:
TO-254
TO-254Z
1/ Derate linearly at 1A/°C for TC > 155°C
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ All electrical characteristics @25°C, unless otherwise specified
4/ Pins 2 and 3 externally connected together
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/ (per leg)
Symbol
Max
Unit
VF1
VF2
VF3
IF = 10 A
IF = 15 A
IF = 20 A
0.75
0.82
0.85
Instantaneous Forward Voltage Drop
(300 - 500μs Pulse)
Volts
Instantaneous Forward Voltage Drop
VF4
Volts
IF = 10 A
0.85
(TA = -55°C, 300 - 500μs Pulse)
TA = 25°C
200
10
Reverse Leakage Current
(Rated VR, 300μs pulse minimum)
IR1
IR2
μA
mA
TC = 100°C
Junction Capacitance
CJ
pF
800
(VR = 10 V, f = 1MHz, TA = 25°C)
CASE OUTLINE: TO-254 (Suffix M)
CASE OUTLINE: TO-254Z (Suffix Z)
Optional Bent Down Leads
(MDB & ZDB Suffix)
Optional with Bent Up Leads
(MUB & ZUB Suffix)
PIN ASSIGNMENT
Available in the following configurations:
SSR2008M, SSR2008MUB, SSR2008MDB,
FUNCTION
PIN 1
Cathode
PIN 2
Anode
PIN 3
Anode
TO-254:
Rectifier 5/
SSR2009M, SSR2009MUB, SSR2009MDB,
SSR2010M, SSR2010MUB, SSR2010MDB
SSR2008Z, SSR2008ZUB, SSR2008ZDB,
SSR2009Z, SSR2009ZUB, SSR2009ZDB,
SSR2010Z, SSR2010ZUB, SSR2010ZDB
TO-254Z:
NOTE: 5/ Pins 2 and 3 externally connected for best
performance.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC
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