SSR2010CAZDB [SSDI]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, HERMETICALLY SEALED, TO-254Z, 3 PIN;
| 型号： | SSR2010CAZDB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, HERMETICALLY SEALED, TO-254Z, 3 PIN |
| 文件： | 总2页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR2008CTM, SSR2008CTZ
SSR2009CTM, SSR2009CTZ
SSR2010CTM, SSR2010CTZ
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMPS
100 VOLTS
Designer’s Data Sheet
CENTER TAP
FEATURES:
SCHOTTKY RECTIFIER
•
•
•
•
•
•
•
•
•
•
PIV: 100 Volts
Low Reverse Leakage Current
Low Forward Voltage Drop
TO-254
TO-254Z
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Package
Available in Glass or Ceramic Seal Packages
Custom Lead Forming Available
Eutectic Die Attach
175°C Operating Junction Temperature
TX, TXV, and Space Level Screening Available
Available in Given Voltage (2008, 2009, 2010) in the Following Configurations:
TO-254: SSR2010CTM, SSR2010CTMUB, SSR2010CTMDB, SSR2010CAM, SSR2010CAMUB, SSR2010CAMDB
SSR1010DM, SSR1010DMUB, SSR1010DMDB
TO-254Z: SSR2010CTZ, SSR2010CTZUB, SSR2010CTZDB, SSR2010CAZ, SSR2010CAZUB, SSR2010CAZDB
SSR1010DZ, SSR1010DZUB, SSR1010DZDB
MAXIMUM RATINGS 1/
Symbol
Value
Unit
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
80
90
SSR2008CTM & CTZ
SSR2090CTM & CTZ
SSR2010CTM & CTZ
Volts
100
3/ 4/
Average Rectified Forward Current
IO
20
Amps
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
3/ 4/
Peak Surge Current
IFSM
300
Amps
°C
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
Operating and Storage Temperature
Maximum Thermal Resistance
TOP & Tstg -65 to +175
Junction to Case 3/
Junction to Case 2/
1.0
°C/W
RθJC
1.7
NOTE:
1/ All Electrical Characteristics @25°C, Unless Otherwise Specified.
2/ Per Leg.
3/ Pins 1 and 3 Connected Together.
4/ Doubler: IO = 10A, IFSM = 200A.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RS0075F
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SSR2008CTM, SSR2008CTZ
SSR2009CTM, SSR2009CTZ
SSR2010CTM, SSR2010CTZ
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 1/, 2/
Symbol
Max
Unit
IF = 1A
IF = 5A
VF1
VF2
VF3
0.57
0.72
0.80
Instantaneous Forward Voltage Drop
Volts
(300 - 500µs Pulse)
IF = 10A
IF = 10A, TA = 100°C
VF4
0.70
Instantaneous Forward Voltage Drop
Volts
IF = 10A, TA = -55°C,
VF5
0.90
(300 - 500µs Pulse)
VR = 100V, TA = 25°C
VR = 100V, TC = 100°C
IR1
IR2
100
5
Reverse Leakage Current
µA
(300µs pulse minimum)
mA
Junction Capacitance
CJ
400
pF
(VR = 10 V, f = 1MHz, TA = 25°C)
CASE OUTLINE: TO-254 (Suffix M)
CASE OUTLINE: TO-254Z (Suffix Z)
OPTIONAL LEAD BEND CONFIGURATION
PIN ASSIGNMENT
FUNCTION PIN 1
Common Cathode Anode Cathode Anode
CODE
CT
PIN 2
PIN 3
CA
Common Anode Cathode Anode Cathode
D
DR
Doubler
Reverse Doubler
Cathode Common Anode
Anode Common Cathode
SUFFIX MDB & ZDB
SUFFUX MUB & ZUB
NOTE:
1/ All Electrical Characteristics @25°C, Unless Otherwise Specified.
2/ Per Leg.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RS0075F
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
相关型号：
SSR2010CAZUB
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, HERMETICALLY SEALED, TO-254Z, 3 PIN
SSDI
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