SSR24C50CTGS [SSDI]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12A, 500V V(RRM), Silicon Carbide, HERMETICALLY SEALED, CERPACK-3;
| 型号： | SSR24C50CTGS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 12A, 500V V(RRM), Silicon Carbide, HERMETICALLY SEALED, CERPACK-3 |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR24C60CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
24 Amp
Schottky Silicon Carbide
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
Centertap Rectifier
SSR24C 60 CT S.5 TX
Screening2/
└
600 Volts
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
__ = Not Screened
TV = TX Level
TXV = TXV Level
S = S Level
Features:
World's Smallest Hermetic SiC Centertap Rectifier
High Voltage, 600V
Very High Operating Temperature, 250°C
No Recovery Time (tfr or trr)
High Current Operation, 24A
Hermetically Sealed Packaging
Package S.5 = SMD.5
G = Cerpack
Configuration
CT = Centertap
TX, TXV, and S Level screening available
Voltage 50 = 500 V
60 = 600 V
Maximum Ratings3/
Symbol
Value
Units
Volts
Amps
Peak Repetitive and Peak Surge Reverse
Voltage
SSR24C50
SSR24C60
VRRM
VRSM
500
600
Per Leg
Total
12
24
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Io
Non Repetitive Peak Surge Current
IFSM
PD
50
120
Amps
Watts
°C
(8.3 ms Pulse, Non-repetitive Half Sine Wave, per leg)
Power Dissipation
(TC = 25°C)
Operating & Storage Temperature 4/
Top & Tstg
-55 to +250
Maximum Thermal Resistance
Junction to Ambient
Junction to Case
RθJC
1.9
°C/W
1
Cerpack (G)
SMD .5 (S.5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0020E
DOC
SSR24C60CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic (Per Leg)
Symbol
VF1
Min
––
––
––
––
––
––
––
Typ
Max
Units
Volts
Volts
Volts
µA
Instantaneous Forward Voltage Drop
(TJ = 25°C, 300 µsec pulse)
IF = 6A
IF = 12A
1.30
1.70
1.38
1.90
Instantaneous Forward Voltage Drop
(TJ = 150°C, 300 µsec pulse)
IF = 6A
IF = 12A
1.30
1.70
1.35
1.85
VF2
VF3
IR1
Instantaneous Forward Voltage Drop
(TJ = -55°C, 300 µsec pulse)
IF = 6A
IF = 12A
1.30
1.60
1.40
1.68
Reverse Leakage Current
(VR = Rated VR, TJ = 25°C, 300 µsec pulse)
100
400
200
26
200
1000
––
Reverse Leakage Current
(VR = Rated VR, TJ = 150°C, 300 µsec pulse)
I R2
µA
Junction Capacitance
(VR = 10 Vdc, TC = 25°C, f=1MHz)
Total Capacitive Charge
(VR = 400 Vdc, IF = 5A, di/dt = 200A/µs, TJ = 150°C)
Cj
pF
Qc
––
nC
NOTES:
1/ For ordering information, price, operating curves, and availability – contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
4/ If high temp operation is desired (>175°C) consult factory for soldering consideration.
PIN ASSIGNMENT
Available Part Numbers:
SSR24C60CTS.5 SSR24C50CTS.5
Package
SMD .5 (S.5) Cathode
Cerpack (G)
Anode
Pin 1
Pin 2
Anode
Anode
Pin 3
Anode
SSR24C60CTG
SSR24C50CTG
Cathode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0020E
DOC
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