SSR30C120S1TXV [SSDI]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN;
SSR30C120S1TXV
型号: SSR30C120S1TXV
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN

二极管
文件: 总2页 (文件大小:71K)
中文:  中文翻译
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SSR30C100S1  
&
SSR30C120S1  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
30 A / 1200 V  
Schottky Silicon Carbide  
Rectifier  
Designer’s Data Sheet  
Part Number / Ordering Information 1/  
SSR30C __  
__ __  
Screening 2/ __ = Not Screened  
TX = TX Level  
FEATURES:  
TXV = TXV  
1200 Volt Silicon Carbide Schottky Rectifier  
Average Output Current 30 Amps  
No Reverse Recovery  
No Forward Recovery  
No Switching Time Change Over  
Temperature  
S = S Level  
Package  
S1 = SMD1  
Voltage 100 = 1000 V  
120 = 1200 V  
Small Package Size  
TX, TXV, and Space Level Screening  
Available. 2/ Consult Factory.  
MAXIMUM RATINGS 3/  
Symbol  
Value  
Units  
Volts  
SSR30C100S1  
SSR30C120S1  
VRRM  
VR  
1000  
1200  
Peak Repetitive and Peak Reverse Voltage  
Average Rectified Forward Current 4/  
IO  
Amps  
Total  
30  
(Resistive Load, 60 Hz, Sine Wave)  
Peak Surge Current 4/  
IFSM  
Amps  
180  
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)  
Total  
Operating & Storage Temperature  
TOP & Tstg  
TJ  
oC  
oC  
-55 to +250  
-55 to +250  
Junction Temperature  
Maximum Thermal Resistance 4/  
(Junction to Case)  
RθJC  
oC/W  
0.8  
Total  
NOTES:  
1/ For Ordering Information, Price, and Availability Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC  
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.  
SMD1  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: SH0043C  
DOC  
SSR30C100S1  
&
SSR30C120S1  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
ELECTRICAL CHARACTERISTICS 3/ 4/  
Symbol  
Min  
Typ  
Max  
Units  
VDC  
VF1  
VF2  
VF3  
VF4  
IF = 10 A  
IF = 20 A  
IF = 30 A  
IF = 40 A  
––  
––  
––  
––  
1.25  
1.65  
1.8  
1.45  
1.75  
2.25  
---  
Instantaneous Forward Voltage Drop  
(TA=25ºC, Pulse)  
2.0  
Instantaneous Forward Voltage Drop  
(Pulse)  
VF5  
VF6  
––  
––  
1.5  
2.6  
2.0  
2.9  
TA= -55ºC, IF = 20 A  
TA= 150 ºC, IF = 20 A  
VDC  
μA  
mA  
pF  
Reverse Leakage Current  
(Rated VR, TA = 25ºC, Pulse)  
IR1  
IR2  
CJ  
––  
––  
––  
250  
1
1500  
5
Reverse Leakage Current  
(Rated VR, TA = 150ºC, Pulse)  
Junction Capacitance  
1250  
2000  
(VR = 10V, f = 1MHz, TA = 25oC)  
NOTES:  
* Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%  
1/ For Ordering Information, Price, and Availability Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC  
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.  
PIN ASSIGNMENT  
Available Part Numbers:  
SSR30C100S1  
SSR30C120S1  
Package  
SMD1  
Pin 1  
Pin 2  
Pin 3  
Anode  
Anode  
Cathode  
SMD1 Outline:  
Tolerances (Unless Specified):  
.XX = ±.030”  
.XXX = ±.010”  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: SH0043C  
DOC  

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