SSR30C120S1TXV [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN;![SSR30C120S1TXV](http://pdffile.icpdf.com/pdf2/p00294/img/icpdf/SSR30C120S1T_1783505_icpdf.jpg)
型号: | SSR30C120S1TXV |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, SMD1, 3 PIN 二极管 |
文件: | 总2页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SSR30C100S1
&
SSR30C120S1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
30 A / 1200 V
Schottky Silicon Carbide
Rectifier
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR30C __
__ __
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
│
└
│
│
│
│
└
└
FEATURES:
TXV = TXV
•
•
•
•
•
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 30 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
S = S Level
Package
S1 = SMD1
Voltage 100 = 1000 V
120 = 1200 V
•
•
Small Package Size
TX, TXV, and Space Level Screening
Available. 2/ Consult Factory.
MAXIMUM RATINGS 3/
Symbol
Value
Units
Volts
SSR30C100S1
SSR30C120S1
VRRM
VR
1000
1200
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current 4/
IO
Amps
Total
30
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current 4/
IFSM
Amps
180
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)
Total
Operating & Storage Temperature
TOP & Tstg
TJ
oC
oC
-55 to +250
-55 to +250
Junction Temperature
Maximum Thermal Resistance 4/
(Junction to Case)
RθJC
oC/W
0.8
Total
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
SMD1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043C
DOC
SSR30C100S1
&
SSR30C120S1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/ 4/
Symbol
Min
Typ
Max
Units
VDC
VF1
VF2
VF3
VF4
IF = 10 A
IF = 20 A
IF = 30 A
IF = 40 A
––
––
––
––
1.25
1.65
1.8
1.45
1.75
2.25
---
Instantaneous Forward Voltage Drop
(TA=25ºC, Pulse)
2.0
Instantaneous Forward Voltage Drop
(Pulse)
VF5
VF6
––
––
1.5
2.6
2.0
2.9
TA= -55ºC, IF = 20 A
TA= 150 ºC, IF = 20 A
VDC
μA
mA
pF
Reverse Leakage Current
(Rated VR, TA = 25ºC, Pulse)
IR1
IR2
CJ
––
––
––
250
1
1500
5
Reverse Leakage Current
(Rated VR, TA = 150ºC, Pulse)
Junction Capacitance
1250
2000
(VR = 10V, f = 1MHz, TA = 25oC)
NOTES:
* Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
PIN ASSIGNMENT
Available Part Numbers:
SSR30C100S1
SSR30C120S1
Package
SMD1
Pin 1
Pin 2
Pin 3
Anode
Anode
Cathode
SMD1 Outline:
Tolerances (Unless Specified):
.XX = ±.030”
.XXX = ±.010”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043C
DOC
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