SSR8045CTNTX [SSDI]
Rectifier Diode,;
| 型号： | SSR8045CTNTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSR8045CTN and SSR8045CTP
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
80 Amp
SCHOTTKY
SSR8045CT PA UB TX
Screening 2/ __ = Not Screened
TX = TX Level
│
│
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│
│
│
│
│
│
│
│
│
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│
│
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│
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│
│
└
│
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└
CENTERTAP RECTIFIER
TXV = TXV Level
45 Volts
S
= S Level
└ Lead Bending:
Features:
__ = Straight
• Low Reverse Leakage
• Low Forward Voltage Drop
UB = Up Bend
DB = Down Bend
• Guard Ring for Overload Protection
• Isolated Hermetically Sealed Power Package
• Also available in SMD1 and SMD2 Versions
• TO-259 Available with Ceramic Seals w/ 40
mil pin
Package: N = TO-258
P = TO-259, 60 mil pin
PA = TO-259, 40 mil pin
• TO-259 Custom Lead Forming Available
• 175ºC Operating Temperature
• TX, TXV, and S Level Screening Available
└ Configuration: CT = Common Cathode
CA = Common Anode
D = Doubler
DR = Doubler Reverse
Maximum Ratings
Symbol
Value
Units
VRRM
VRSM
VR
Peak Repetitive Reverse and DC Blocking Voltage
45
Volts
Average Rectified Forward Current 3/
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Io
80
Amps
Peak Surge Current 3/
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
1200
Amps
ºC
Operating & Storage Temperature
T
OP & TSTG
-65 to +175
Maximum Thermal Resistance
Junction to Case
Total
Per Leg
0.5
1.0
RθJE
ºC/W
NOTES:
TO-258 (N)
TO-259 (P)
1/ For ordering information, price, operating curves, and availability
Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on
request.
3/ Maximum electrical rating shown for centertap configurations both legs
tied together. For doubler configurations: IO = 40A, IFSM = 600A.
4/ All electrical characteristics per leg @25ºC, unless otherwise specified.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0065J
DOC
SSR8045CTN and SSR8045CTP
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 – 500usec Pulse)
VF1
VF2
VF3
––
––
––
IF = 10A
IF = 20A
IF = 40A
0.53
0.65
0.90
VDC
Instantaneous Forward Voltage Drop
(TA = -55ºC, 300 – 500usec Pulse)
VF4
––
IF = 20A
0.72
VDC
Reverse Leakage Current
(100% of rated VR, 300µs pulse min.)
IR1
IR2
TA = 25ºC
TA = 100ºC
––
––
400
30
µA
mA
Junction Capacitance
(VR=10VDC, TA=25ºC, f=1MHz)
CJ
––
1600
pF
TO-258 Outline:
TO-259 Outline:
Available Part Numbers:
PIN ASSIGNMENT:
SSR8045CTN, SSR8045CTNUB, SSR8045CTNDB, SSR8045CTP,
SSR8045CTPUB, SSR8045CTPDB, SSR8045CTPA, SSR8045CTPAUB,
SSR8045CTPADB, SSR8045CAN, SSR8045CANUB, SSR8045CANDB,
SSR8045CAP, SSR8045CAPUB, SSR8045CAPDB, SSR8045CAPA,
SSR8045CAPAUB, SSR8045CAPADB, SSR8045DN, SSR8045DNUB,
SSR8045DNDB, SSR8045DP, SSR8045DPUB, SSR8045DPDB,
SSR8045DPA, SSR8045DPAUB, SSR8045DPADB, SSR8045DRN,
SSR8045DRNUB, SSR8045DRNDB, SSR8045DRP, SSR8045DRPUB,
SSR8045DRPDB, SSR8045DRPA, SSR8045DRPAUB,
TO-258
TO-259
Pin 1
Pin 1
Pin 2
Pin 3
Pin 2
Cathode
Anode
Pin 3
Anode
Common Cathode (CT)
Common Anode (CA)
Doubler (D)
Anode
Cathode
Cathode
Cathode Common Anode
Anode Common Cathode
SSR8045DRPADB
Doubler Reverse (DR)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0065J
DOC
相关型号：
SSR8045CTPA
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 45V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
SSR8045CTPADB
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 45V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
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