TG0005C [SSDI]
ultrafast IGBT;
| 型号： | TG0005C |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | ultrafast IGBT 双极性晶体管 |
| 文件： | 总3页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG55N60 series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
55 AMP /600 Volts
1.65 V saturation
ultrafast IGBT
Part Number/Ordering Information 1/
SSG55N60 ___ ___
Screening 2/
│
│
│
│
└
└
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
M = TO-254
Z = TO-254Z
N = TO-258
P = TO-259
/3 = TO-3
Features:
Lowest ON-resistance in the industry
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Maximum Ratings
Symbol
VCES
Value
600
Units
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
V
V
VGE
±20
@ TC = 25ºC
@ TC = 100ºC
ID1
ID2
55
27
Max. Continuous Collector Current
A
Max. Instantaneous Drain Current (Tj limited)
Clamped Inductive Load current
@ TC = 25ºC
L= 10 uH
ID3
ILM
200
200
A
A
Repetitive Reverse Voltage Avalanche Energy
Total Power Dissipation
Limited by Tj max
@ TC = 25ºC
EARV
20
mJ
W
PD
195
Operating & Storage Temperature
TOP & TSTG
R0JC
-55 to +150
0.64 (typ 0.35)
ºC
Maximum Thermal Resistance (Junction to Case)
ºC/W
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
TO-3 (/3)
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0005C
DOC
Solid State Devices, Inc.
SSG55N60 series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
BVCES
Min
600
18
Typ
––
Max
––
Units
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
VGE = 0V, IC = 250μA
V
V
VGE = 0V, IC = 1 A
BVECS
––
––
VGE = 15V, IC = 27A, Tj= 25oC
––
––
––
1.65
2.0
1.6
2.0
––
––
Collector to Emitter Saturation Voltage
VGE = 15V, IC = 55A, Tj= 25oC
VCE(on)
V
V
GE = 15V, IC = 27A, Tj= 150oC
VCE = VGE, IC = 0.25 mA
VGE = ±20V
Gate Threshold Voltage
Gate to Emitter Leakage
VGS(th)
IGES
3.0
––
––
––
6.0
V
±100
nA
V
V
CE = 600V, VGE = 0V, Tj = 25oC
––
––
––
0.5
––
––
250
2
5000
μA
μA
μA
Zero Gate Voltage Collector Current
Forward Transconductance
CE = 10V, VGE = 0V, Tj = 25oC
ICES
gfs
VCE = 600V, VGE = 0V, Tj = 150oC
VCE = 15V, IC = 27A, Tj = 25oC
15
25
––
Mho
Total Turn-on Gate Charge
Gate to Emitter Turn-on Charge
Gate to Collector Turn-on Charge
VGE = 15V
VCC = 400V
IC = 27A
Qg
Qge
Qgc
––
––
––
150
25
60
275
40
90
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
50
70
––
300
150
VGE = 15V, VCC = 480V,
125
250
120
nsec
mJ
IC = 27A, RG = 5.0Ω, Tj = 25oC
Turn-On Switching Losses
Turn-Off Switching Losses
Total Switching Losses
Eon
Eoff
Ets
0.12
0.55
0.66
––
––
0.9
VGE = 15V, VCC = 480V,
––
IC = 27A, RG = 5.0Ω, Tj = 25oC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
––
90
600
230
1200
1.6
120
––
300
––
ns
ns
ns
ns
mJ
VGE = 15V, VCC = 480V,
IC = 27A, RG = 5.0Ω, Tj = 150oC
Total Switching Losses
Ets
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
Cies
Coes
Cres
––
––
––
4000
250
20
––
––
––
VCC = 30V
pF
f = 1 MHz
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0005C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSG55N60 series
TO-258 (N)
TO-259 (P)
PIN ASSIGNMENT (Standard)
TO-3 (/3)
Package
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
TO-3 (/3)
Collector
Pin 1
Emitter
Pin 2
Pin 2
Pin 2
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Pin 3
Pin 3
Pin 1
Pin 1
Pin 1
Pin 1
Case
Available Part Numbers:
SSG55N60M
SSG55N60Z
SSG55N60N
SSG55N60P
SSG55N60/3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0005C
DOC
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