TR0011B_15 [SSDI]
NPN DARLINGTON TRANSISTOR;
| 型号： | TR0011B_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | NPN DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT10000/3
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
NPN DARLINGTON
TRANSISTOR
350 VOLTS
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT10000 __ __
Screening 2/
Features:
│
│
│
│
│
│
└
└
BVCEO 350 Volts
__ = Not Screened
Low Saturation Voltage
TX = TX Level
TXV = TXV Level
S = S Level
200oC Operating Temperature
Hermetically Sealed, Isolated Package
TX, TXV, S-Level Screening Available. Consult Factory.
Application Notes:
Package
SFT10000 Darlington Transistor is a direct replacement of
Motorola MJ1000. It is designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical.
It is particularly suited for line operated switchmode
applications such as:
/3 = TO-3
.
.
.
.
.
Switching Regulators
Inverters
Solenoid and Relay Drives
Motor Controls
Deflection Circuits
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
VCEO
VCEV
VEB
350
450
8
Volts
Volts
Volts
Continuous
Peak
IC
ICM
20
30
Collector Current
Amps
Base Current
IB
2.5
Amps
Total Power Dissipation
@ TC = 25ºC
@ TC = 100ºC
175
100
1
Watts
Watts
W/ºC
PD
Derate above 50ºC
Operating & Storage Temperature
TJ & TSTG
R0JC
-65 to +200
ºC
Maximum Thermal Resistance
(Junction to Case)
1
ºC/W
NOTES:
TO-3(/3)
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011B
DOC
SFT10000/3
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
VCEO(sus)
Min
Max Units
Collector – Emitter Sustaining Voltage
(IC = 250 mA, IB = 0, VCLAMP = Rated VCEO
80
––
Volts
Volts
mA
)
Collector – Emitter Sustaining Voltage
(VCLAMP = Rated VCEX, TC = 100ºC)
IC = 2A
IC = 10A
400
275
––
––
VCEX(sus)
ICBO
Collector Cutoff Current
(VCE = Rated Value, VBE(off) = 1.5V)
TC = 25ºC
TC = 100ºC
––
––
0.25
5.0
Collector Cutoff Current
(VCEV = Rated VCEV, RBE = 50Ω, TC = 100ºC )
ICEV
––
––
5
mA
Emitter Cutoff Current
(VEB = 8V, IC = 0)
IEBO
150
mA
DC Current Gain*
(VCE = 5V)
IC = 5A
IC = 10A
50
40
600
400
HFE
Collector-Emitter Saturation Voltage*
IC = 10A, IB = 400mA, TC = 25ºC
IC = 20A, IB = 1A, TC = 25ºC
IC = 10A, IB = 400mA, TC = 100ºC
––
––
––
1.9
3.0
2.0
VCE (SAT)
Volts
Base-Emitter Saturation Voltage*
(IC = 10A, IB = 400mA)
TC = 25ºC
TC = 100ºC
––
––
2.5
2.5
VBE (SAT)
VF
Volts
Volts
Diode Forward Voltage
(IF = 10A)
––
10
5.0
––
Small Signal Current Gain
(IC = 1A, VCE = 10V, f = 1MHz)
HFE
Output Capacitance
(VCB = 30V, IE = 0A, f = 2.0MHz)
Cob
100
325
pF
Delay Time
td
tr
––
––
0.2
0.6
µs
µs
t(on)
t(off)
Rise Time
VCC = 250V, IC = 10A, IB1 = IB2 = 400 mA, VBE (off) = 5V,
tp = 50s, Duty Cycle ≤ 2%
Storage Time
Fall Time
ts
tf
––
––
3.5
2.4
μs
µs
Storage Time
Crossover Time
IC = 10A(pk), VCLAMP = Rated VCEX
IB1 = 400 mA, VBE (off) = 5V, TC = 100ºC
,
tsv
tc
––
––
5.5
3.7
µs
µs
NOTES:
*
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
CASE OUTLINE: TO-3
Pin Out:
Case – Collector
1 – Base
2 – Emitter
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011B
DOC
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