ES1E [SSE]
SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER; 表面装载超快速开关整流器
| 型号： | ES1E |
| 厂家： | 
SHANGHAI SUNRISE ELECTRONICS |
| 描述： | SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
ES1A THRU ES1G
SURFACE MOUNT SUPER
TECHNICAL
SPECIFICATION
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 400V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
SMA/DO-214AC
B
place application
• Low profile package
A
F
C
• Built-in strain relief
• High surge capability
D
• Glass passivated chip
• Super fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
H
G
MECHANICAL DATA
• Terminal: Plated leads solderable per
A
B
C
D
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
MIL-STD 202E, method 208C
E
F
G
H
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL ES1A ES1B ES1C ES1D ES1E ES1G UNITS
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=110oC)
100
IF(AV)
1.0
30
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
IFSM
VF
IR
A
V
0.95
1.25
Ta=25oC
Ta=100oC
5.0
200
35
Maximum DC Reverse Current
µA
µA
nS
pF
oC/W
oC
(at rated DC blocking voltage)
Maximum Reverse Recovery Time (Note 1)
trr
CJ
10
Typical Junction Capacitance
Typical Thermal Resistance
(Note 2)
(Note 3)
40
Rθ(ja)
-50 to +150
TSTG,TJ
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com
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