FR301G [SSE]

GLASS PASSIVATED FAST RECOVERY RECTIFIER; 玻璃钝化快速恢复整流
FR301G
型号: FR301G
厂家: SHANGHAI SUNRISE ELECTRONICS    SHANGHAI SUNRISE ELECTRONICS
描述:

GLASS PASSIVATED FAST RECOVERY RECTIFIER
玻璃钝化快速恢复整流

快速恢复二极管
文件: 总1页 (文件大小:18K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
FR301G THRU FR307G  
GLASS PASSIVATED  
TECHNICAL  
SPECIFICATION  
FAST RECOVERY RECTIFIER  
VOLTAGE: 50 TO 1000V CURRENT: 3.0A  
FEATURES  
• Molded case feature for auto insertion  
DO - 201AD  
• Glass passivated chip  
• High current capability  
• Low leakage current  
• Fast switching for high efficiency  
• High surge capability  
• High temperature soldering guaranteed:  
250oC/10sec/0.375"(9.5mm) lead length  
at 5 lbs tension  
MECHANICAL DATA  
• Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Color band denotes cathode  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
FR  
FR  
FR  
FR  
FR  
FR  
FR  
RATINGS  
SYMBOL  
UNITS  
301G 302G 303G 304G 305G 306G 307G  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
(9.5mm lead length, at Ta=55oC)  
IF(AV)  
3.0  
A
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at rated forward current )  
IFSM  
VF  
125  
1.3  
A
V
Ta=25oC  
5.0  
Maximum DC Reverse Current  
µA  
µA  
IR  
Ta=100oC  
100  
(at rated DC blocking voltage)  
150  
500  
Maximum Reverse Recovery Ti  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
(Note 3)  
trr  
CJ  
250  
nS  
40  
30  
pF  
oC/W  
oC  
Rθ(ja)  
-65 to +150  
T
STG,TJ  
Storage and Operation Junction Temperature  
Note:  
1.Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A  
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc  
3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted  
http://www.sse-diode.com  

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