RS1J [SSE]
SURFACE MOUNT FAST SWITCHING RECTIFIER; 表面贴装快速开关整流器
| 型号： | RS1J |
| 厂家： | 
SHANGHAI SUNRISE ELECTRONICS |
| 描述： | SURFACE MOUNT FAST SWITCHING RECTIFIER |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RS1A THRU RS1M
SURFACE MOUNT FAST
TECHNICAL
SPECIFICATION
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
SMA/DO-214AC
• Ideal for surface mount pick and
B
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
C
A
F
D
H
G
MECHANICAL DATA
A
B
C
D
• Terminal: Plated leads solderable per
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
MIL-STD 202E, method 208C
E
F
G
H
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated,for capacitive load,
derate current by 20%)
RS RS RS RS RS RS RS
RATINGS
SYMBOL
UNITS
1A
50
1B
100 200 400 600 800 1000
70 140 280 420 560 700
1D 1G
1J
1K 1M
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
35
50
Maximum DC Blocking Voltage
100 200 400 600 800 1000
Maximum Average Forward Rectified Current
(TL=110oC)
IF(AV)
IFSM
VF
1.0
A
A
V
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
30
1.3
Ta=25oC
Ta=125oC
(Note 1)
5.0
Maximum DC Reverse Current
(at rated DC blocking voltage)
µA
µA
IR
200
150
500
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
trr
CJ
250
nS
15
30
(Note 2)
(Note 3)
pF
oC/W
oC
Rθ(ja)
-50 to +150
T
STG,TJ
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com
相关型号：
RS1J-E3/2P
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
RS1J-E3/2Q
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
RS1J-G
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
SENSITRON
RS1J-GT3
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
SENSITRON
©2020 ICPDF网 联系我们和版权申明