S1G [SSE]

SURFACE MOUNT GLASS PASSIVATED RECTIFIER; 表面安装玻璃钝化整流
S1G
型号: S1G
厂家: SHANGHAI SUNRISE ELECTRONICS    SHANGHAI SUNRISE ELECTRONICS
描述:

SURFACE MOUNT GLASS PASSIVATED RECTIFIER
表面安装玻璃钝化整流

文件: 总1页 (文件大小:19K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
S1A THRU S1M  
SURFACE MOUNT GLASS  
TECHNICAL  
SPECIFICATION  
PASSIVATED RECTIFIER  
VOLTAGE: 50 TO 1000VCURRENT: 1.0A  
FEATURES  
• Ideal for surface mount pick and  
SMA/DO-214AC  
B
place application  
C
A
F
• Low profile package  
• Built-in strain relief  
• High surge capability  
• High temperature soldering guaranteed:  
260oC/10sec/at terminal  
D
H
G
MECHANICAL DATA  
• Terminal: Plated leads solderable per  
A
B
C
D
MIL-STD 202E, method 208C  
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)  
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Color band denotes cathode  
E
F
G
H
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)  
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
RATINGS  
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNITS  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
Maximum Average Forward Rectified Current  
(TL=100oC)  
IF(AV)  
IFSM  
VF  
1.0  
A
A
V
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at rated forward current)  
30  
1.1  
Ta=25oC  
Ta=125oC  
5.0  
200  
Maximum DC Reverse Current  
µA  
µA  
IR  
(at rated DC blocking voltage)  
15  
CJ  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
pF  
oC/W  
oC  
30  
Rθ(ja)  
-65 to +150  
T
STG,TJ  
Storage and Operation Junction Temperature  
Note:  
1.Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area  
http://www.sse-diode.com  

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