SB85 [SSE]
SILICON SCHOTTKY DETECTING DIODE; 硅肖特基探测二极管
| 型号： | SB85 |
| 厂家： | 
SHANGHAI SUNRISE ELECTRONICS |
| 描述： | SILICON SCHOTTKY DETECTING DIODE |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB85
SILICON SCHOTTKY
DETECTING DIODE
TECHNICAL
SPECIFICATION
REVERSE VOLTAGE: 50V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
DO - 34
DO - 35
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
250oC/10S/9.5mm lead length
at 5 lbs tension
.060 (1.5)
.090 (2.3)
.050 (1.27)
.075 (1.91)
DIA.
DIA.
DIA.
.120 (3.0)
.200 (5.1)
.085 (2.2)
.120 (3.0)
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
MIL-STD 202E, method 208C
.018 (0.46)
.022 (0.56)
.018 (0.46)
.022 (0.56)
DIA.
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
VALUE
RATINGS
SYMBOL
UNITS
Typ.
Max.
50
VR
IFM
IF
Reverse Voltage
V
mA
mA
V
150
30
Forward Current (peak)
Forward Current (D.C.)
0.4
0.8
3
IF=10mA
VF1
VF2
IR
Forward Voltage (D.C.)
IF=100mA
V
Reverse Current (VR=30V)
Capacitance
µA
pF
6
(Note 1)
(Note 2)
Ct
60%
Detection Effectiveness
Operating Junction and Storage
oC
TJ,TSTG
-55 +125
Temperature Range
Notes:
1. VR=10V, f=1MHz
2. Vm=3V(peak), f=30MHz, RL=3.9KΩ, Ct=10pF.
http://www.sse-diode.com
相关型号：
SB850-LF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220A, 2 PIN
WTE
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