STQ-3016 [STANFORD]

2500 - 4000 MHz Direct Quadrature Modulator; 2500 - 4000 MHz的直接正交调制器
STQ-3016
型号: STQ-3016
厂家: STANFORD MICRODEVICES    STANFORD MICRODEVICES
描述:

2500 - 4000 MHz Direct Quadrature Modulator
2500 - 4000 MHz的直接正交调制器

射频 微波
文件: 总8页 (文件大小:225K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Advanced Data Sheet  
Product Description  
STQ-3016  
The Stanford MicrodevicesSTQ-3016 is a direct quadra-  
ture modulator targeted for use in a wide range of commu-  
nications systems. This device features a wide 2500-4000  
MHz operating frequency band, excellent carrier and side-  
band suppression, and a low broadband noise floor.  
2500 - 4000 MHz  
Direct Quadrature Modulator  
The STQ-3016 uses silicon germanium device technology  
and delivers a typical output power of -13dBm with 50dB  
IM3 suppression. A shutdown feature is included that,  
when enabled, attenuates the output by 60dB.  
16 pin TSSOP with Exposed Pad  
Package Body: 0.20 x 0.17 x 0.04 (inches)  
5.0 x 4.4 x 1.0 (mm)  
Functional Block Diagram  
Product Features  
2500-4000 MHz operating frequency  
1
2
3
4
5
6
7
8
16 BBQN  
BBQP  
VCC  
VEE  
No external IF filter  
Very low noise floor performance  
Excellent carrier and sideband suppression  
Low LO drive requirements  
Shut-down feature  
Single 5 volt supply  
Supports wideband baseband input  
15  
VCC  
14 VEE  
13  
LOP  
LON  
VEE  
SD  
RFP  
LO  
QUADRATURE  
GENERATOR  
12 RFN  
11  
VEE  
Applications  
10 VCC  
Digital communication system  
Spread spectrum communication systems  
GMSK, QPSK, QAM, SSB moduators  
Fixed wireless communication systems  
BBIP  
9
BBIN  
Key Specifications  
Parameters  
Test Conditions (Vs=5.0V, I=82mA, T=25ºC)  
Unit  
MHz  
dBm  
dBm  
dB  
Min.  
Typ.  
Max.  
Frequency Range  
Output P1dB  
2500  
4000  
fLO = 3500 MHz  
fLO = 3500 MHz, unoptimized  
LO = 3500 MHz  
+1  
-40  
33  
Carrier Feedthrough  
Sideband Suppression  
f
fLO = 3500 MHz, baseband inputs tied to 1.9VDC  
-20 MHz offset from carrier  
,
Broadband Noise Floor  
LO Drive Level  
dBm/Hz  
dBm  
-153  
-6  
-9  
-3  
See page 2 for general test conditions  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
1
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Absolute Maximum Ratings  
Parameters  
Value  
Unit  
Test Conditions  
VS  
+5V  
Supply Voltage  
6.0  
VDC  
dBm  
VDC  
VDC  
ºC  
LO, RF Input  
+10  
TA  
+25ºC  
Min Input Voltage (BBIP, BBIN, BBQP, BBQN)  
Max Input Voltage (BBIP, BBIN, BBQP, BBQN)  
Operating Temperature  
0
1.9V DC bias, 200kHz fre-  
quency, 300mVp-p per pin =  
600mVp-p differential drive, I  
and Q signals in quadrature  
Baseband  
Inputs  
3
-40 to +85  
-65 to +150  
LO Input  
-5dBm @ 3500 MHz  
Storage Temperature  
ºC  
Product Specifications RF Output  
Parameters  
Additional Test Conditions  
Unit  
MHz  
dBm  
dB  
Min.  
Typ.  
Max.  
Frequency Range  
Output Power  
2500  
4000  
-13  
RF Port Return Loss  
Output P1dB  
3.2 to 3.8 GHz, matched to 50 ohm ref. on evaluation board  
unoptimized  
14  
dBm  
dBm  
dB  
+1  
-40  
33  
Carrier Feedthrough  
Sideband Suppression  
IM3 Suppression  
two-tone baseband input @ 600mVp-p differential per tone  
dB  
50  
Broadband Noise Floor  
Quadrature Phase Error  
I/Q Amplitude Balance  
baseband inputs tied to 1.9VDC, -20 MHz offset from carrier dBm/Hz  
-153  
deg  
dB  
-3  
+3  
-0.2  
+0.2  
Product Specifications - Modulation Input  
Parameters  
Additional Test Conditions  
Unit  
MHz  
kohms  
pF  
Min.  
Typ.  
Max.  
Baseband Frequency Input  
Baseband Input Resistance  
Baseband Input Capacitance  
-3dB bandwidth, baseband inputs terminated in 50 ohms  
DC  
1000  
per pin  
per pin  
4.4  
0.5  
Product Specifications - LO Input  
Parameters  
Additional Test Conditions  
Unit  
MHz  
dBm  
dB  
Min.  
2500  
-9  
Typ.  
Max.  
4000  
-3  
Usable LO Frequency  
LO Drive Level  
-6  
LO Port Return Loss  
3.2 to 3.8 GHz, matched to 50 ohm ref. on evaluation board  
14  
Product Specifications Miscellaneous  
Parameters  
Shut-Down Attenuation  
Shut-Down Pin Resistance  
Shut-Down Pin Capacitance  
Shut-Down Input Thresholds  
Shut-Down Settling Time  
Supply Voltage  
Additional Test Conditions  
Unit  
dB  
Min.  
Typ.  
60  
Max.  
@ 1MHz  
@ 1MHz  
kohm  
pF  
6.1  
0.7  
CMOS  
<500  
+5  
ns  
V
+4.75  
+5.25  
Supply Current  
mA  
ºC/W  
82  
Device Thermal Resistance  
junction-case  
TBD  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
2
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Typical Device Performance  
Fig. 2: Output P1dB vs. LO Frequency  
Fig. 1: SSB Power vs. LO Frequency  
-8  
-10  
-12  
-14  
-16  
-18  
5
3
1
-1  
-3  
-5  
2500  
2750  
3000  
3250  
3500  
3750  
4000  
2500  
2750  
3000  
3250  
3500  
3750  
4000  
LO Frequency (MHz)  
LO Frequency (MHz)  
Fig. 3: Carrier Feedthrough vs. LO Frequency  
Fig. 4: Sideband Suppression vs. LO Frequency  
40  
38  
36  
34  
32  
30  
-40  
-42  
-44  
-46  
-48  
-50  
2500  
2750  
3000  
3250  
3500  
3750  
4000  
2500  
2750  
3000  
3250  
3500  
3750  
4000  
LO Frequency (MHz)  
LO Frequency (MHz)  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
3
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Small Signal S-Parameters  
RF Port  
LO Port  
Single-Ended  
Mag.  
Differential  
Mag.  
Single-Ended  
Mag.  
Differential  
Frequency  
(MHz)  
Frequency  
(MHz)  
Ang.  
124.9  
123.1  
121.3  
119.6  
117.8  
116.1  
114.4  
112.8  
111.1  
109.5  
107.9  
106.4  
104.8  
103.3  
101.8  
100.3  
Ang.  
55.75  
54.86  
53.98  
53.12  
52.29  
51.48  
50.69  
49.92  
49.17  
48.44  
47.73  
47.04  
46.36  
45.7  
Ang.  
68.71  
67.80  
66.89  
65.97  
65.05  
64.12  
63.19  
62.26  
61.32  
60.37  
59.43  
58.48  
57.53  
56.57  
55.61  
54.65  
Mag.  
Ang.  
2500  
2600  
2700  
2800  
2900  
3000  
3100  
3200  
3300  
3400  
3500  
3600  
3700  
3800  
3900  
4000  
0.364  
0.367  
0.370  
0.373  
0.376  
0.379  
0.383  
0.386  
0.390  
0.393  
0.397  
0.401  
0.405  
0.409  
0.414  
0.418  
0.320  
0.330  
0.339  
0.349  
0.358  
0.366  
0.375  
0.384  
0.392  
0.400  
0.408  
0.416  
0.424  
0.432  
0.440  
0.447  
2500  
2600  
2700  
2800  
2900  
3000  
3100  
3200  
3300  
3400  
3500  
3600  
3700  
3800  
3900  
4000  
0.303  
0.315  
0.327  
0.339  
0.351  
0.363  
0.375  
0.387  
0.399  
0.411  
0.423  
0.434  
0.446  
0.458  
0.469  
0.480  
0.695  
0.681  
0.667  
0.654  
0.641  
0.629  
0.618  
0.607  
0.597  
0.588  
0.580  
0.573  
0.566  
0.561  
0.556  
0.552  
-109.9  
-114.4  
-118.9  
-123.4  
-127.9  
-132.5  
-137.0  
-141.6  
-146.2  
-150.8  
-155.3  
-159.9  
-164.5  
-169.0  
-173.5  
-178.0  
45.06  
44.43  
Notes:  
1. VCC = +5.0V, T = +25ºC.  
2. For single-ended S-parameters, the corresponding differential pin is left floating.  
3. Data is referenced to the foot of the package lead and does not include the applications circuit.  
4. All data simulated.  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
4
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Pin Out Description  
Pin #  
Function  
BBQP  
VCC  
Description  
Additional Comments  
1
2
3
4
5
6
Q-channel baseband input, positive terminal  
Positive supply (+5V)  
Nominal DC bias voltage is 1.9V (biased internally)  
VEE  
Ground  
LOP  
Local oscillator input, positive terminal  
Local oscillator input, negative terminal  
Ground  
Nominal DC voltage is 2.0V. Input should be AC-coupled.  
Nominal DC voltage is 2.0V. Input should be AC-coupled.  
LON  
VEE  
CMOS logic levels. Logic high = normal operation;  
logic low = shut-down enabled.  
7
SD  
Shut-down control  
8
BBIP  
BBIN  
VCC  
VEE  
I-channel baseband input, positive terminal  
I-channel baseband input, negative terminal  
Positive supply (+5V)  
Nominal DC bias voltage is 1.9V (biased internally)  
Nominal DC bias voltage is 1.9V (biased internally)  
9
10  
11  
12  
13  
14  
15  
16  
Ground  
RFN  
RFP  
RF output, negative terminal  
RF output, positive terminal  
Ground  
Nominal DC voltage is 2.4V. Output should be AC-coupled.  
Nominal DC voltage is 2.4V. Output should be AC-coupled.  
VEE  
VCC  
BBQN  
Positive supply (+5V)  
Q-channel baseband input, negative terminal  
Nominal DC bias voltage is 1.9V (biased internally)  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
5
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Part Number Ordering Information  
Part Number  
Reel Size  
Devices/Reel  
Caution: ESD Sensitive  
STQ-3016  
TBD  
TBD  
Appropriate precaution in handling, packaging  
and testing devices must be observed.  
Part Symbolization  
The part will be symbolized with a TBDmarking  
designator on the top surface of the package.  
Package Dimensions  
NOTE  
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH  
PROTRUSIONS OR GATE BURRS  
2. TOLERANCE ±0.1 mm UNLESS OTHERWISE SPECIFIED  
3. COPLANARITY : 0.1 mm  
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED  
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.  
5. FOLLOWED FROM JEDEC MO-153  
DIMENSIONS IN MILLIMETERS  
DIMENSIONS IN INCHES  
SYMBOLS  
MIN  
NOM  
MAX  
MIN  
NOM  
MAX  
A
A1  
A2  
b
C
D
D1  
E
E1  
−−−  
0.00  
0.80  
0.19  
0.09  
4.90  
−−−  
−−−  
4.30  
−−−  
−−−  
1.00  
−−−  
−−−  
5.00  
2.80  
6.40  
4.40  
1.15  
0.10  
1.05  
0.30  
0.20  
5.10  
−−−  
−−−  
4.50  
−−−  
0.000  
0.031  
0.007  
0.004  
0.193  
−−−  
−−−  
−−−  
0.039  
−−−  
0.045  
0.004  
0.041  
0.012  
0.008  
0.201  
−−−  
−−−  
0.197  
0.110  
0.252  
0.173  
−−−  
0.169  
−−−  
0.177  
E2  
e
L
y
−−−  
−−−  
0.45  
−−−  
0°  
2.80  
0.65  
0.60  
−−−  
−−−  
−−−  
−−−  
0.75  
0.10  
8°  
−−−  
−−−  
0.018  
−−−  
0°  
0.110  
0.026  
0.024  
−−−  
−−−  
−−−  
0.030  
0.004  
8°  
θ
−−−  
12°(4X)  
Test PCB Pad Layout  
1.25  
3.0  
0.30  
0.35  
0.62  
0.62  
3.0  
φ0.25 via  
0.7  
0.9  
6.9  
all units are in mm  
- Indicates metalization  
- vias connect pad to underlying ground plane  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
6
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Demo Test Board Schematic  
P12  
BBQ+  
P13  
BBQ-  
H1  
+5V  
1
2
L1  
VCC  
C3  
R10  
R9  
Lumped  
Lumped  
Element Balun  
Element Balun  
P14  
STQ-3016  
VCC  
VCC  
C19  
C10  
C17  
1
16  
15  
14  
13  
12  
11  
BBQP  
BBQN  
L5  
L3  
2
C20  
L2  
C22  
VCC  
VEE  
C4  
VCC  
VEE  
R5  
L7  
R3  
R4  
3
4
5
RF  
P8  
LO  
P9  
LOP  
LON  
RFP  
RFN  
VEE  
6
7
8
L6  
VEE  
R6  
L4  
10  
9
C16  
C9  
VCC  
C5  
SD  
C23  
C21  
BBIN  
BBIP  
C18  
VCC  
H2  
1
R1  
R7  
SH1  
2
R8  
VCC  
P10  
BBI+  
P11  
BBI-  
Bill of Materials (for evaluation at 3.5GHz)  
Component  
Designator  
Value  
Qty  
Vendor  
Part Number  
Description  
P14  
1
SMDI  
STQ-3016  
STQ-3016 SiGe Direct Quadrature Modulator  
P8, P9, P10,  
P11, P12, P13  
Johnson  
Components  
6
142-0701-851  
SMA connector, end launch with tab, for .062thick board  
H1, H2  
L1  
2
1
4
1
2
1
AMP  
640453-2  
2-pin header, right angle  
1uH  
Panasonic  
Venkel  
Venkel  
Venkel  
Venkel  
ELJ-FA1R0KF2  
CR1206-8W-2000FT  
Inductor, 1210 footprint, ±10% tolerance  
Resistor, 1206 footprint, ± 1% tolerance  
Resistor, 0603 footprint, ±1% tolerance  
R1, R7, R9, R10 200 ohm  
R8  
C9, C17  
C3  
10 kohm  
1nF  
CR0603-16W-1002FT  
C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance  
C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating  
2.2uF  
C4, C5, C10,  
1.0pF  
6
1
6
Venkel  
3M  
C0603COG500-100JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance  
C16, C18, C19  
SH1  
929950-00  
Shunt for 2-pin header  
L2, L3, L4, L5,  
L6, L7  
2.2nH  
TOKO  
LL1608FS-F2N2S  
Inductor, 0603 footprint, ±0.3nH tolerance  
C20, C21, C22,  
C23  
Capacitor, 0603 footprint, COG dielectric, ±0.25pF toler-  
ance  
0.5pF  
0 ohm  
4
4
Venkel  
Venkel  
C0603COG500-0R5CNE  
CR0603-16W-000T  
R3, R4, R5, R6  
Resistor, 0603 footprint  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
7
http://www.stanfordmicro.com  
05/07/01 rev 2.0  
Advanced Data Sheet  
674ꢀꢁꢂꢃꢄꢅ'LUHFWꢅ4XDGUDWXUHꢅ0RGXODWRU  
Demo Test Board  
(Fully Assembled PCB)  
2"  
P13  
P12  
1
2
H1  
C3  
2"  
L1  
R10  
C17  
R9  
C19  
P9  
P8  
L5  
P14  
L3  
C22  
R5  
C20  
L7  
C10  
C4  
R3  
R4  
R6  
C16  
L6  
C5  
C18  
L4  
C23  
L2  
C21  
R8  
C9  
R1  
R7  
H2  
1
2
SH1  
P11  
P10  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices  
product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
8
http://www.stanfordmicro.com  
05/07/01 rev 2.0  

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MICROSEMI

STQ1006

Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
MICROSEMI

STQ1553-1

MILITARY/AEROSPACE PRODUCTS
PULSE

STQ1553-2

MILITARY/AEROSPACE PRODUCTS
PULSE

STQ1553-3

MILITARY/AEROSPACE PRODUCTS
PULSE

STQ1553-45

MILITARY/AEROSPACE PRODUCTS
PULSE

STQ1553-5

MILITARY/AEROSPACE PRODUCTS
PULSE

STQ1HNC60

N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh⑩II MOSFET
STMICROELECTR

STQ1HNK60R

N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
STMICROELECTR

STQ1HNK60R-AP

N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
STMICROELECTR

STQ1NC45

N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET
STMICROELECTR