ST1413AC [STANSON]
P Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
| 型号： | ST1413AC |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | P Channel Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P Channel Enhancement Mode MOSFET
ST1413AC
-3.4A
DESCRIPTION
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOD-353 (SC-70)
FEATURE
z -20V/-3.4A, RDS(ON) = 130m-ohm
@VGS = -4.5V
z -20V/-2.4A, RDS(ON) = 150m-ohm
@VGS = -2.5V
z -20V/-1.7A, RDS(ON) = 190m-ohm
D
D
D
S
G
@VGS = -1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-353 (SC-70) package design
1.4.5.Drain 2.Gate 3.Source
1AYW
1A : Part Marking
Y : Year Code
W : Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
-20
Unit
V
+/-12
V
-2.8
-2.0
A
℃ TA=25℃
Continuous Drain Current (TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
-8
A
A
Continuous Source Current (Diode Conduction)
-1.4
Power Dissipation
PD
0.33
0.21
W
TA=25℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
105
℃
℃
℃
TSTG
Thermal Resistance-Junction to Ambient
Rθ
JA
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 2
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20
V
-1.0 V
100 nA
-1
Gate Threshold Voltage
Gate Leakage Current
VGS(th) VDS=VGS,ID=-250uA -0.4
IGSS
VDS=0V,VGS=+/-12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
uA
-5
℃
TJ=55
ID(on)
-6.0
A
≦
VDS -5V,VGS=-4.5V
RDS(on) VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
0.110 0.130
0.130 0.150
0.170 0.190
6
Drain-source On-Resistance
Ω
VGS=-1.8V,ID=-1.5A
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=-5V,ID=-2.8V
S
gfs
VSD
IS=-1.6A,VGS=0V
-0.8 -1.2 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=-6V,VGS=-4.5V
4.8
1.0
1.0
485
85
8
nC
≡
ID -2.8A
VDS=-6V,VGS=0V
F=1MHz
pF
nS
40
10
25
60
td(on)
tr
td(off)
tf
Ω
VDD=-6V,RL=6
13
ID=-1A,VGEN=-4.5V
Turn-Off Time
18
15
70
60
Ω
RG=6
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 3
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
SOT-353 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 4
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 5
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 6
P Channel Enhancement Mode MOSFET
-3.4A
ST1413AC
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 7
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