ST3400 [STANSON]
N Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | ST3400 |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | N Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST3400
N Channel Enhancement Mode MOSFET
5.8A
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
FEATURE
PIN CONFIGURATION
SOT-23-3L
z
z
z
z
z
z
30V/5.8A, RDS(ON) = 28mΩ (Typ.)
@VGS = 10V
30V/4.8A, RDS(ON) = 33mΩ
@VGS = 4.5V
30V/4.0A, RDS(ON) = 40mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
3
D
G
S
1
2
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A0YA
1
2
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3400S23RG
SOT-23-3L
A0YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
ST3400
N Channel Enhancement Mode MOSFET
5.8A
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
Unit
30
V
V
±
12
TA=25℃
5.8
3.5
℃
Continuous Drain CurrentTJ=150 )
A
℃
TA=70
Pulsed Drain Current
IDM
25
A
Continuous Source Current (Diode Conduction)
IS
1.7
A
TA=25℃
2.0
1.3
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
90
TSTG
℃
/W
Rθ
Thermal Resistance-Junction to Ambient
JA
2
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
ST3400
N Channel Enhancement Mode MOSFET
5.8A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
30
V
V
Gate Threshold Voltage
0.8
1.6
±
±
VDS=0V,VGS= 12V
100
1
Gate Leakage Current
nA
VDS=24V,VGS=0V
VDS=24V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
10
℃
TJ=55
≧
On-State Drain Current
ID(on)
VDS 5V,VGS=4.5V
10
VGS=10V,ID=5.8A
VGS=4.5V,ID=4.8A
VGS=2.5V,ID=4.0A
28
33
40
Ω
m
Drain-source On-Resistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=4.5V,ID=5.8A
IS=1.7A,VGS=0V
12
S
VSD
0.8 1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
9.7
1.6
3.1
18
VDS=15V
VGS=10V
ID 6.7A
nC
pF
≣
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
450
240
38
VDS=15V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
7
15
VDD=15V
RL=15
ID=1.0A
VGEN=10V
td(on)
Turn-On Time
Turn-Off Time
Ω
tr
10
20
11
20
40
20
nS
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
ST3400
N Channel Enhancement Mode MOSFET
5.8A
℃
TYPICAL CHARACTERICTICS (25 Unless noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
ST3400
N Channel Enhancement Mode MOSFET
5.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
ST3400
N Channel Enhancement Mode MOSFET
5.8A
SOT-23-3L PACKAGE OUTLINE
6
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
相关型号：
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ST3401SRG
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
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