ST6006 [STANSON]
N Channel Enchancement Mode MOSFET; N沟道阳城模式MOSFET
| 型号： | ST6006 |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | N Channel Enchancement Mode MOSFET |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
DESCRIPTION
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters
and power motor controls, these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and offer additional safetv
margin against unexpected voltage transients.
PIN CONFIGURATION
APPLICATIONS
TO-220-3L
ST6006
TO-263-2L
ST6006S
z Power Supplies
z Converters
z Power Motor controls
z Bridge Circuit
FEATURE
z 20V/2.8A, RDS(ON) = 85m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 115m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum
DC current capability
z SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
ORDERING INFORMATION
Part Number
Package
Part Marking
ST6006T220TG
ST6006T220RG
TO-220-3L
TO-263-2L
ST6006D
ST6006
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
60
Unit
V
+/-20
V
60
39
A
℃ TA=25℃
Continuous Drain Current (TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
120
A
A
Continuous Source Current (Diode Conduction)
60
Power Dissipation
PD
120
3.7
W
TA=25℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
℃
℃
℃
TSTG
-55/150
Thermal Resistance-Junction to Ambient
Rθ
40
JA
/W
62.5
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page2
N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10uA
60
VGS(th) VDS=VGS,ID=50uA 1.0
V
V
Gate Threshold Voltage
Gate Leakage Current
3.0
IGSS
VDS=0V,VGS=20V
100 nA
VDS=60V,VGS=0V
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain Current
uA
50
IDSS
℃
TJ=125
VDS=60V,VGS=0V
℃
TJ=175
On-State Drain Current
ID(on)
VDS=5V,VGS=10V
60
A
Drain-source On-Resistance
VGS=10V,ID=30A
VGS=10V,ID=30A
12
24
16
30
RDS(on)
Ω
m
℃
TJ=125
VGS=10V,ID=30A
31
37
19
℃
TJ=175
VGS=5V,ID=30A
VDS=15V,ID=30A
14
49
Forward Transconductance
Diode Forward Voltage
Dynamic
S
gfs
VSD
IF=60A,VGS=0V
1.6
60
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=30V,VGS=10V
39
12
10
2000
400
115
12
nC
≡
ID 60A
VDS=25V,VGS=0V
F=1MHz
pF
nS
25
60
td(on)
tr
td(off)
tf
Ω
VDD=10V,RL=5.5
36
ID=3.6A,VGEN=4.5V
Turn-Off Time
34
10
60
25
Ω
RG=6
Page3
N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
TO-220-3L PACKAGE OUTLINE
ST6006
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page4
N Channel Enchancement Mode MOSFET
60V/60
ST6006S / ST6006
TO-263-2L PACKAGE OUTLINE
ST6006S
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 5
N Channel Enchancement Mode MOSFET
60V60A
ST6006S / ST6006
TYPICAL CHARACTERISTICS
Page 6
N Channel Enchancement Mode MOSFET
60V60A
ST6006S / ST6006
TYPICAL CHARACTERISTICS
Page 7
N Channel Enchancement Mode MOSFET
60V60A
ST6006S / ST6006
TYPICAL CHARACTERISTICS
Page 8
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