STN8205AA [STANSON]
Dual N Channel Enhancement Mode MOSFET; 双N沟道增强型MOSFET
| 型号： | STN8205AA |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | Dual N Channel Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
FEATURE
PIN CONFIGURATION
TSSOP-8
z
z
z
20V/6.0A, RDS(ON) = 30m-ohm@VGS =4.5V
D2 S2 S2 G2
20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V
Super high density cell design for extremely
low RDS(ON)
8
7
6
5
z
z
Exceptional low on-resistance and maximum
DC current capability
TSSOP-8 package design
STN8205AA
1
2
3
4
D1 S1 S1 G1
S：Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN8205AAST8RG
TSSOP-8
SYA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST8205AAST8RG
ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
Typical
Unit
VDSS
VGSS
ID
20
V
V
A
Gate-Source Voltage
+/-20
6.0
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
3.4
30
Pulsed Drain Current
IDM
IS
A
A
Continuous Source Current (Diode Conduction)
2
Power Dissipation
TA=25℃
TA=70℃
PD
2.0
W
1.2
Operation Junction Temperature
Storage Temperature Range
TJ
-40/140
-55/150
105
℃
℃
TSTG
RθJA
Thermal Resistance-Junction to Ambient
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
20
V
VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th)
IGSS
0.6
1.2
V
VDS=VGS,ID=250uA
VDS=0V,VGS=+/-20V
VDS=20V,VGS=0V
Gate Leakage Current
±100 nA
1
Zero Gate Voltage Drain
Current
IDSS
uA
5
VDS=20V,VGS=0V
TJ=85℃
On-State Drain Current
ID(on)
VDS≦5V,VGS=4.5V
6
A
0.024 0.030
0.032 0.042
10
VGS=4.5V,ID=6.0A
Drain-source On-Resistance
Forward Transconductance
RDS(on)
Ω
VGS=2.5V,ID=5.0A
gfs
S
V
VDS=5V,ID=3.6A
IS=1.7A,VGS=0V
Diode Forward Voltage
Dynamic
VSD
0.8
1.2
Total Gate Charge
Qg
10.5
nC
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
2.5
2.1
VDS=10V,VGS=4.5V,VDS=4A
Input Capacitance
Ciss
Coss
Crss
805
155
122
VDS=8V,VGS=0V
f=1MHz
pF
nS
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Td(on)
tr
Td(off)
tf
14
6
45
20
VDD=10V, RL=10Ω, ID=1.0A,
VGEN=4.5V, RG=10Ω
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
TSSOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
相关型号：
STN8810
Trio of Nomadik application processors bring multimedia to next-generation mobile devices
STMICROELECTR
STN8810BDS12HPBE
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明