ST2300S23RG [STANSON]

N Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
ST2300S23RG
元器件型号: ST2300S23RG
生产厂家: STANSON TECHNOLOGY    STANSON TECHNOLOGY
描述和应用:

N Channel Enhancement Mode MOSFET
N沟道增强型MOSFET

PDF文件: 总7页 (文件大小:298K)
下载文档:  下载PDF数据表文档文件
型号参数:ST2300S23RG参数

ST2300SRG

6A20V N沟道MOS管

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58 STANSON

ST2300SRG_V2

N Channel Enhancement Mode MOSFET

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21 ETC

ST2301

P Channel Enchancement Mode MOSFET

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1130 STANSON

ST23014P0

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23014P1

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AC

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1 IRF

ST23014P1PBF

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23014P2

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P0

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P0PBF

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P1

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST23016P1PBF

暂无描述

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0 IRF

ST23016P2

Silicon Controlled Rectifier, 566.77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AC

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0 IRF

ST2301A

P Channel Enhancement Mode MOSFET

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208 STANSON

ST2301M

P Channel Enhancement Mode MOSFET

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74 STANSON

ST2301MSRG

P Channel Enhancement Mode MOSFET

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39 STANSON