ST3400SRG [STANSON]

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.; 该ST3400SRG是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。
ST3400SRG
元器件型号: ST3400SRG
生产厂家: STANSON TECHNOLOGY    STANSON TECHNOLOGY
描述和应用:

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
该ST3400SRG是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。

晶体 晶体管 功率场效应晶体管
PDF文件: 总6页 (文件大小:547K)
下载文档:  下载PDF数据表文档文件
型号参数:ST3400SRG参数

ST3401

P Channel Enhancement Mode MOSFET

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173 STANSON

ST3401M23RG_V2

P Channel Enhancement Mode MOSFET

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20 ETC

ST3401S23RG

P Channel Enhancement Mode MOSFET

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39 STANSON

ST3401SRG

ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

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42 STANSON

ST3402

N Channel Enhancement Mode MOSFET

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140 STANSON

ST3402S23RG

N Channel Enhancement Mode MOSFET

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32 STANSON

ST3403

P Channel Enchancement Mode MOSFET

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178 STANSON

ST3406

N Channel Enhancement Mode MOSFET

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70 STANSON

ST3406S23RG

N Channel Enhancement Mode MOSFET

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71 STANSON

ST3406SRG

ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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24 STANSON

ST3407

P Channel Enhancement Mode MOSFET

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58 STANSON

ST3407S23RG

P Channel Enhancement Mode MOSFET

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32 STANSON

ST3407S23RG_V2

P Channel Enhancement Mode MOSFET

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18 ETC

ST3407SRG

ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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32 STANSON

ST3413

P Channel Enhancement Mode MOSFET

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82 STANSON