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元器件品牌
ST3401
[STANSON]
P Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
元器件型号:
ST3401
生产厂家:
STANSON TECHNOLOGY
描述和应用:
P Channel Enhancement Mode MOSFET
P沟道增强型MOSFET
PDF文件:
总6页 (文件大小:198K)
下载文档:
下载PDF数据表文档文件
型号参数:ST3401参数
查看货源
ST3401M23RG_V2
P Channel Enhancement Mode MOSFET
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156
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20
ETC
ST3401S23RG
P Channel Enhancement Mode MOSFET
Warning
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on line
156
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39
STANSON
ST3401SRG
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
Warning
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on line
156
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42
STANSON
ST3402
N Channel Enhancement Mode MOSFET
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156
-
140
STANSON
ST3402S23RG
N Channel Enhancement Mode MOSFET
Warning
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on line
156
-
32
STANSON
ST3403
P Channel Enchancement Mode MOSFET
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on line
156
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178
STANSON
ST3406
N Channel Enhancement Mode MOSFET
Warning
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156
-
70
STANSON
ST3406S23RG
N Channel Enhancement Mode MOSFET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
71
STANSON
ST3406SRG
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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24
STANSON
ST3407
P Channel Enhancement Mode MOSFET
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on line
156
-
58
STANSON
ST3407S23RG
P Channel Enhancement Mode MOSFET
Warning
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on line
156
-
32
STANSON
ST3407S23RG_V2
P Channel Enhancement Mode MOSFET
Warning
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on line
156
-
18
ETC
ST3407SRG
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
32
STANSON
ST3413
P Channel Enhancement Mode MOSFET
Warning
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on line
156
-
82
STANSON
ST3413A_V2
P Channel Enhancement Mode MOSFET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
15
ETC
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