STN1810 [STANSON]

STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.; STN1810是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。
STN1810
元器件型号: STN1810
生产厂家: STANSON TECHNOLOGY    STANSON TECHNOLOGY
描述和应用:

STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。

晶体 晶体管 功率场效应晶体管
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型号参数:STN1810参数

STN1A60

Silicon Bidirectional Triode Thyristors

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17 TGS

STN1A60

Bi-Directional Triode Thyristor

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27 SEMIWELL

STN1A60

Logic Level Bi-Directional Triode Thyristor

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40 WINSEMI

STN1A60

Bi-Directional Triode Thyristor

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90 SEMIWELL

STN1A60S

Logic Level Bi-Directional Triode Thyristor

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24 WINSEMI

STN1A80

Silicon Bidirectional Triode Thyristors

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11 TGS

STN1A80

Bi-Directional Triode Thyristor

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4 SEMIWELL

STN1A80

Bi-Directional Triode Thyristor

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16 SEMIWELL

STN1A80

Logic Level Bi-Directional Triode Thyristor

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34 WINSEMI

STN1HNC60

N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET

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26 STMICROELECTR

STN1HNK60

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

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133 STMICROELECTR

STN1HNK60

N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

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74 STMICROELECTR

STN1N20

N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

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70 STMICROELECTR

STN1NB80

N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET

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148 STMICROELECTR

STN1NB80

0.2A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

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0 STMICROELECTR