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STN4346 [STANSON]

STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.; STN4392是采用高密度， DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。

STN4346


元器件型号：	STN4346
生产厂家：	STANSON TECHNOLOGY
描述和应用：	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. STN4392是采用高密度， DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。晶体晶体管功率场效应晶体管
PDF文件：	总7页 (文件大小：352K)
下载文档：	下载PDF数据表文档文件
型号参数：STN4346参数

STN4392

STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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25 STANSON

STN4402_V1

N Channel Enhancement Mode MOSFET

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156 ETC

STN4412

N Channel Enhancement Mode MOSFET

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144 STANSON

STN4412S8RG

N Channel Enhancement Mode MOSFET

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39 STANSON

STN4412S8TG

N Channel Enhancement Mode MOSFET

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17 STANSON

STN4416

STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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20 STANSON

STN4426

STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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59 STANSON

STN4438

STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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217 STANSON

STN4440

STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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75 STANSON

STN4480

STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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28 STANSON

STN4488L

STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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36 STANSON

STN4526

STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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108 STANSON

STN4546

STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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24 STANSON

STN4822

STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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81 STANSON

STN4850

STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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66 STANSON

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