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STP6621 [STANSON]

STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.; STP6621是采用高密度， DMOS沟槽技术生产的P沟道逻辑增强型功率场效应晶体管。

STP6621


元器件型号：	STP6621
生产厂家：	STANSON TECHNOLOGY
描述和应用：	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. STP6621是采用高密度， DMOS沟槽技术生产的P沟道逻辑增强型功率场效应晶体管。晶体晶体管功率场效应晶体管
PDF文件：	总6页 (文件大小：452K)
下载文档：	下载PDF数据表文档文件
型号参数：STP6621参数

STP6A60

Bi-Directional Triode Thyristor

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52 SEMIWELL

STP6LNC60

N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET

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36 STMICROELECTR

STP6LNC60FP

N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET

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32 STMICROELECTR

STP6N120K3

N-channel 1200 V, 1.95 Î© typ., 6 A SuperMESH3â¢ Power MOSFET in TO-3PF, TO-220 and TO-247 packages

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270 STMICROELECTR

STP6N25

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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40 STMICROELECTR

STP6N25FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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28 STMICROELECTR

STP6N50

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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30 STMICROELECTR

STP6N50FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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27 STMICROELECTR

STP6N60FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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97 STMICROELECTR

STP6N62K3

N-channel 620 V, 0.95 Î© typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

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24 STMICROELECTR

STP6N62K3

N-channel 620 V, 0.95 Î© typ., 5.5 A SuperMESH3â¢ Power MOSFET in TO-220FP, IÂ²PAKFP, IÂ²PAK, TO-220, IPAK packages

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31 STATEK

STP6N95K5

N-channel 950 V, 1 Î© typ., 9 A Zener-protected SuperMESHâ¢ 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

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50 STMICROELECTR

STP6NA50

6.3A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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0 STMICROELECTR

STP6NA50FI

4A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN

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0 STMICROELECTR

STP6NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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71 STMICROELECTR

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