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STP9527 [STANSON]

STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.; STP9527是采用高密度， DMOS沟槽技术生产的P沟道逻辑增强型功率场效应晶体管。

STP9527


元器件型号：	STP9527
生产厂家：	STANSON TECHNOLOGY
描述和应用：	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. STP9527是采用高密度， DMOS沟槽技术生产的P沟道逻辑增强型功率场效应晶体管。晶体晶体管功率场效应晶体管
PDF文件：	总7页 (文件大小：927K)
下载文档：	下载PDF数据表文档文件
型号参数：STP9527参数

STP9547

P Channel Enhancement Mode MOSFET

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37 STANSON

STP9547S8RG

P Channel Enhancement Mode MOSFET

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16 STANSON

STP9547S8TG

P Channel Enhancement Mode MOSFET

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25 STANSON

STP95N04

N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET

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27 STMICROELECTR

STP95N04

N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET

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20 STMICROELECTR

STP95N2LH5

N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

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15 STMICROELECTR

STP95N3LLH6

N-channel 30 V, 0.0037 Î© , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET

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21 STMICROELECTR

STP95N4F3

N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET

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13 STMICROELECTR

STP95N4F3

N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220 STripFET™ III Power MOSFET

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31 STMICROELECTR

STP95N4F3

N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET

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16 STMICROELECTR

STP9N30

TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB

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19 ETC

STP9NA50

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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35 STMICROELECTR

STP9NA50FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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27 STMICROELECTR

STP9NB50

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

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54 STMICROELECTR

STP9NB50FP

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

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54 STMICROELECTR

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