2N3700UB06 [STMICROELECTRONICS]
SMALL SIGNAL TRANSISTOR;
| 型号： | 2N3700UB06 |
| 厂家： | 
ST |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总20页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3700HR
Hi-Rel 80 V, 1 A NPN transistor
Datasheet
-
production data
Features
1
2
BVCEO
80 V
1 A
3
IC(max)
3
3
TO-18
4
HFE at 10 V - 150 mA
>100
1
1
2
2
LCC-3
UB
• Hermetic packages
Pin 4 in UB is connected to the metallic lid
• ESCC and Jans qualified
• Up to 100 krad(Si) low dose rate
Figure 1. Internal schematic diagram
Description
The 2N3700HR is a NPN transistor specifically
designed for aerospace and Hi-Rel applications. It
is available in the JAN qualification system (MIL-
PRF19500) and in the ESCC qualification system
(ESCC 5000). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Table 1. Device summary
Qualification
system
Device
Agency specification
Package
Radiation level
EPPL
JANSR2N3700UBx
JANS2N3700UBx
2N3700RUBx
2N3700UB0xSW
2N3700UB0x
JANSR
JANS
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
MIL-PRF-19500/391
MIL-PRF-19500/391
5201/004
UB
UB
100 krad HDR
-
-
-
UB
100 krad ESCC
100 krad SW
-
Target
5201/004
UB
-
5201/004
UB
Target
SOC3700RHRx
SOC3700SW
SOC3700HRB
2N3700RHRx
2N3700SW
5201/004
LCC-3
LCC-3
LCC-3
TO-18
TO-18
TO-18
100 krad ESCC
100 krad SW
-
Yes
5201/004
-
5201/004
Yes
5201/004
100 krad ESCC
100 krad SW
-
-
-
-
5201/004
2N3700HR
5201/004
September 2013
DocID15354 Rev 7
1/20
This is information on a product in full production.
www.st.com
Contents
2N3700HR
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
2.4
JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1
6.2
Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
DocID15354 Rev 7
2N3700HR
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-base voltage (IE = 0)
140
V
V
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
80
7
V
1
A
for 2N3700HR
0.5
W
W
W
W
°C
°C
Total dissipation at Tamb ≤ 25 °C
for SOC3700HRB
for SOC3700HRB (1)
for 2N3700HR
0.5
Ptot
0.76
1.8
Total dissipation at Tc ≤ 25 °C
Storage temperature
Tstg
TJ
-65 to 200
200
Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3. Thermal data
Symbol
Parameter
LCC-3 and UB
TO-18
Unit
Thermal resistance junction-case
(max) for JAN
-
-
97
-
RthJC
Thermal resistance junction-case
(max) for ESCC
350
90
Thermal resistance junction-solder
pad (infinite sink) (max) for JAN
RthJSP(IS)
°C/W
Thermal resistance junction-solder
pad (infinite sink) (max) for ESCC
-
-
Thermal resistance junction-ambient
(max) for JAN
325
240(1)
-
RthJA
Thermal resistance junction-ambient
(max) for ESCC
350
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
DocID15354 Rev 7
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Electrical characteristics
2N3700HR
2
Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
Tcase = 25 °C unless otherwise specified.
2.1
JANS electrical characteristics
Table 4. JANS electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector cut-off
current (IE = 0)
ICBO
VCB = 140 V
-
-
-
10
μA
VCE = 90 V
VCE = 90 V, Tamb= 150°C
10
5
nA
μA
Collector cut-off
current (IE = 0)
ICES
Emitter cut-off current VEB = 5 V
(IC = 0)
10
10
nA
μA
IEBO
VEB = 7 V
Collector-emitter
breakdown voltage
V(BR)CEO
IC = 30 mA
-
80
V
(IB = 0)
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
0.2
0.5
V
V
Collector-emitter
saturation voltage
VCE(sat)
-
-
Base-emitter
saturation voltage
VBE(sat)
IC = 150 mA
IB = 15 mA
1.1
V
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
VCE = 10 V
VCE = 10 V
25
45
-
-
-
200
VCE = 10 V 100
300
200
hFE
DC current gain
IC = 150 mA
Tamb= 150°C
VCE = 10 V
40
-
IC = 500 mA
IC = 1 A
VCE = 10 V
VCE = 10 V
IC = 1 mA
50
15
-
-
VCE = 5 V
f = 1 kHz
80
5
-
-
-
-
400
20
Small signal current
gain
hfe
V
CE = 10 V
f = 20 MHz
EB = 0.5 V
100 kHz ≤ f ≤ 1 MHz
VEB = 0.5 V
IC = 50 mA
Output capacitance
(IE = 0)
V
Cobo
12
pF
pF
Output capacitance
(IE = 0)
Cibo
60
100 kHz ≤ f ≤ 1 MHz
4/20
DocID15354 Rev 7
2N3700HR
Electrical characteristics
Table 4. JANS electrical characteristics (continued)
Parameter Test conditions Min. Typ. Max. Unit
VCE = 10 V IC = 100 μA
Symbol
NF
Noise figure
-
4
dB
Rg = 1 kΩ, power bandwidth
Collector-base time
constant
VCB =10 V; IC=10 mA;
f=79.8 MHz
r'b,Cc(1)
toff + toff
400
30
ps
ns
Switching times
see circuit Figure 6
-
1. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector-
base terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf voltmeter across the
emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies:
r'b , Cc(ps) = 2 X Veb (mV).
2.2
ESCC electrical characteristics
Table 5. ESCC 5201/004 post radiation electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector cut-off
current (IE = 0)
ICBO
VCB = 90 V
-
-
10
10
nA
nA
Emitter cut-off current
(IC = 0)
IEBO
VEB = 5 V
Collector-base
breakdown voltage
V(BR)CBO
IC = 100 μA
140
80
7
-
-
V
V
V
(IE = 0)
Collector-emitter
breakdown voltage
(IB = 0)
(1)
V(BR)CEO
IC = 30 mA
Emitter-base
breakdown voltage
(IC = 0)
V(BR)EBO
IE = 100 μA
-
-
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
0.2
0.5
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
Base-emitter
saturation voltage
(1)
VBE(sat)
IC = 150 mA
IB = 15 mA
1
V
IC = 10 mA
IC = 150 mA
IC = 500 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
[45]
[50]
[25]
Post irradiation gain
calculation (2)
(1)
[hFE
]
-
[300]
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
2. The post-irradiation gain calculation of [h ], made using h measurements from prior to and on
FE
FE
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
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Electrical characteristics
2N3700HR
2.3
Electrical characteristics (curves)
Figure 2. DC current gain (VCE=1 V)
Figure 3. DC current gain (VCE=10 V)
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voltage
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6/20
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2N3700HR
Electrical characteristics
2.4
Test circuits
Figure 6. JANS non saturated switching-time test circuit
+18 V
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the
generator source impedance shall be 50 ohms.
2. Sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 12 pF, rise time ≤ 2.0 ns.
Gipd040620131551FSR
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Electrical characteristics
2N3700HR
Figure 7. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
8/20
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2N3700HR
Radiation hardness assurance
3
Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5201/004 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. A brief summary is provided below:
•
All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-
STD-750 for total Ionizing dose.
•
Each wafer of each lot is tested. The table below provides for each monitored
parameters of the test conditions and the acceptance criteria.
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol
Parameter
Test conditions
VCB = 140 V
CE = 90 V
Min.
Typ. Max. Unit
Collector cut-off
current (IE = 0)
ICBO
-
20
20
μA
Collector-emitter cut-
off current
ICES
V
nA
Emitter cut-off current VEB = 5 V
20
20
nA
μA
IEBO
-
-
(IC = 0)
VEB = 7 V
Collector-emitter
breakdown voltage
V(BR)CEO
IC = 30 mA
80
V
(IB = 0)
IC = 150 mA
mA
IB = 15
IB = 50
0.23
0.58
V
V
Collector-emitter
saturation voltage
VCE(sat)
-
IC = 500 mA
mA
Base-emitter
saturation voltage
IC = 150 mA
mA
IB = 15
VBE(sat)
1.1
V
IC = 150 mA
IC = 0.1 mA
IC = 10 mA
IC = 500 mA
IC = 1.0 A
VCE = 10 V [50](1)
VCE = 10 V [25](1)
VCE = 10 V [45](1)
VCE = 10 V [25](1)
VCE = 10 V [7.5](1)
300
200
Post irradiation gain
calculation
[hFE
]
200
1. See method 1019 of MIL-STD-750 for how to determine [h ] by first calculating the delta (1/h ) from the
FE
FE
pre- and post-radiation h . Notice the [h ] is not the same as h and cannot be measured directly. The
FE
FE
FE
FE
[h ] value can never exceed the pre-radiation minimum h that it is based upon.
FE
DocID15354 Rev 7
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20
Radiation hardness assurance
2N3700HR
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
•
Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept
for reference
•
•
Irradiation at 0.1 rad (Si)/s
Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples
comply with the post radiation electrical characteristics provided in Table XX???
•
Delivery together with the parts of the radiation verification test (RVT) report of the
particular wafer used to manufacture the products. This RVT includes the value of each
parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room
temperature and after an additional 168 hour annealing at 100°C.
Table 7. ESCC 5201/004 post radiation electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector cut-off
current (IE = 0)
ICBO
VCB = 90 V
-
-
10
10
nA
nA
Emitter cut-off current
(IC = 0)
IEBO
VEB = 5 V
Collector-base
breakdown voltage
(IE = 0)
V(BR)CBO
IC = 100 μA
140
80
7
-
-
V
V
V
Collector-emitter
breakdown voltage
(1)
V(BR)CEO
IC = 30 mA
(IB = 0)
Emitter-base
breakdown voltage
(IC = 0)
V(BR)EBO
IE = 100 μA
-
-
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
0.2
0.5
V
V
Collector-emitter
saturation voltage
(1)
VCE(sat)
Base-emitter
saturation voltage
(1)
VBE(sat)
IC = 150 mA
IB = 15 mA
1
V
IC = 10 mA
IC = 150 mA
IC = 500 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
[45]
[50]
[25]
Post irradiation gain
calculation (2)
(1)
[hFE
]
-
[300]
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
2. The post-irradiation gain calculation of [h ], made using h measurements from prior to and on
FE
FE
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
10/20
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2N3700HR
Radiation hardness assurance
Table 8. Radiation summary
Radiation test
100 krad “SW”
100 krad ESCC
Wafer tested
Part tested
each
each
5 biased + 5 unbiased
0.1 rad/s
5 biased
Dose rate
0.1 rad/s
Acceptance
Fixed values (1)
MIL-STD-750 method 1019
Displacement damage
Agency part number (ex)
ST part number (ex)
Documents
Optional
Optional
5202/001/04 (2)
SOC3700SW
CoC +RVT
5202/001/04R (2)
SOC3700ARHRG
CoC +RVT
1. Part numbers with suffix "SW" have same pre and post irradiation electrical.
2. Example of the 2N3700 in LCC-3 gold finish.
DocID15354 Rev 7
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Package mechanical data
2N3700HR
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
12/20
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2N3700HR
Package mechanical data
Table 9. UB mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
C
D
E
F
G
I
1.16
0.46
0.56
0.92
1.95
2.92
2.41
0.42
1.37
0.41
2.46
1.81
1.42
0.56
0.96
1.12
2.11
3.18
2.67
0.72
1.67
0.61
2.62
2.01
0.51
0.76
1.02
2.03
3.05
2.54
0.57
1.52
0.51
2.54
1.91
0.20
0.30
0.56
J
K
L
M
N
r
r1
r2
Figure 8. UB drawings
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Package mechanical data
2N3700HR
Table 10. LCC-3 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
C
D
E
F
G
I
1.16
0.45
0.60
0.91
1.95
2.92
2.41
0.42
1.37
0.40
2.46
1.80
1.42
0.56
0.91
1.12
2.11
3.17
2.66
0.72
1.67
0.60
2.62
2.00
0.50
0.76
1.01
2.03
3.05
2.54
0.57
1.52
0.50
2.54
1.90
0.30
J
K
L
M
N
R
Figure 9. LCC-3 drawings
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2N3700HR
Package mechanical data
Table 11. TO-18 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
B
D
E
F
G
H
I
12.7
0.49
5.3
4.9
5.8
2.54
45°
1.2
1.16
L
Figure 10. TO-18 drawings
DocID15354 Rev 7
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5
Order codes
Table 12. Order codes
Agency
specification
Lead
finish
Part number
EPPL
Quality level
Radiation level
Package
Marking(1)
Packing
Engineering model
JANS
J2N3700UB1
2N3700UB1
SOC3700
-
-
-
-
-
-
-
UB
UB
Gold
Gold
Gold
J3700UB1
2N3700UB1
SOC3700
WafflePack
WafflePack
WafflePack
Engineering model
ESCC
-
-
Engineering model
ESCC
LCC-3
JANSR2N3700UBG MIL-PRF-19500/391
JANSR2N3700UBT MIL-PRF-19500/391
JANS2N3700UBG MIL-PRF-19500/391
JANS2N3700UBT MIL-PRF-19500/391
-
JANSR
JANSR
JANS
100 krad HDR
UB
UB
Gold
Solder Dip
Gold
JSR3700
JSR3700
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
WafflePack
-
100 krad HDR
-
-
-
UB
JS3700
JANS
-
UB
Solder Dip
Gold
JS3700
2N3700RUBG
5201/004/06R
5201/004/07R
5201/004/06
5201/004/07
5201/004/06
5201/004/07
5201/004/04R
5201/004/05R
Target
Target
-
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
100 krad ESCC
100 krad ESCC
100 krad SW
100 krad SW
-
UB
520100406R
520100407R
520100406
520100407
520100406
520100407
520100404R
520100405R
2N3700RUBT
UB
Solder Dip
Gold
2N3700UB06SW (2)
2N3700UB07SW (2)
2N3700UB06
UB
-
UB
Solder Dip
Gold
Target
Target
Yes
Yes
UB
2N3700UB07
-
UB
Solder Dip
Gold
SOC3700RHRG
SOC3700RHRT
100 krad ESCC
100 krad ESCC
LCC-3
LCC-3
Solder Dip
5201/004/04 or 05
Gold or
Solder Dip
520100404 or
05 (3)
SOC3700SW (2)
ESCC
100 krad SW
LCC-3
WafflePack
(3)
5201/004/04 or 05
Gold or
Solder Dip
520100404 or
05 (3)
SOC3700HRB
2N3700RHRG
Yes
-
-
LCC-3
TO-18
WafflePack
Strip Pack
(3)
5201/004/01R
ESCC
100 krad ESCC
Gold
520100401R
Table 12. Order codes
Agency
specification
Lead
finish
Part number
EPPL
Quality level
Radiation level
Package
Marking(1)
Packing
2N3700RHRT
2N3700SW (2)
5201/004/02R
-
-
ESCC
ESCC
100 krad ESCC
100 krad SW
TO-18
TO-18
Solder Dip
520100402R
Strip Pack
Strip Pack
5201/004/01 or 02
Gold or
Solder Dip
520100401 or
02 (3)
(3)
5201/004/01 or 02
Gold or
Solder Dip
520100401 or
02 (3)
2N3700HR
-
ESCC
-
TO-18
Strip Pack
(3)
1. Specific marking only. The full marking includes in addition: For the engineering models: ST logo, date code, country of origin (FR). For ESCC flight parts: ST logo, date
code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts : ST logo, date code, country of origin (FR), manufacturer
code (CSTM), serial number of the part within the assembly lot.
2. Not recommended for new design.
3. Depending ESCC part number mentioned on the purchase order.
Shipping details
2N3700HR
6
Shipping details
6.1
Date code
Data code xyywwz is structured as described below:
Table 13. Date code
x
yy
ww
z
EM
3
-
(ESCC and JANS)
ESCC flight
last two digits of
the year
lot index in the
week
week digits
JANS flight
(diffused in
Singapore)
W
6.2
Documentation
Table 14. Documentation provided for each type of product
Quality level
Radiation level
Documentation
Engineering model
JANS Flight
-
-
-
Certificate of conformance
Certificate of conformance 50 rad/s radiation
verification test report
JANSR Flight
100 krad
-
Certificate of conformance
ESCC Flight
Certificate of conformance
100 krad
0.1 rad/s radiation verification test report
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Revision history
7
Revision history
Table 15. Document revision history
Changes
Date
Revision
10-Jan-2008
07-Jan-2010
26-Jul-2010
1
2
3
Initial release
Modified Table 1 on page 1
Modified Table 1 on page 1, added Table 10 on page 14
– Modified: Table 6 on page 9
30-Nov-2011
17-Apr-2013
4
5
– Added: Section 2.3: Electrical characteristics (curves)
– Minor text change in the document title on the coverpage
Added: Section 3: Radiation hardness assurance
Updated order codes in Table 1 on page 1 and Table 12: Order
codes.
Updated Section 3: Radiation hardness assurance.
11-Jun-2013
18-Sep-2013
6
7
Minor text changes.
Updated order codes in Table 1: Device summary and Table 12:
Order codes.
DocID15354 Rev 7
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2N3700HR
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相关型号：
2N3701LEADFREE
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
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