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2N5415S

更新时间：2025-07-03 02:22:02
品牌：STMICROELECTRONICS
描述：HIGH-VOLTAGE AMPLIFIER

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中文翻译

免费 PCB/SMT

2N5415S 概述

HIGH-VOLTAGE AMPLIFIER HIGH-电压放大器 小信号双极晶体管

2N5415S 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-39包装说明：CYLINDRICAL, O-MBCY-W3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.12最大集电极电流 (IC)：0.2 A
集电极-发射极最大电压：200 V配置：SINGLE
最小直流电流增益 (hFE)：30JEDEC-95代码：TO-39
JESD-30 代码：O-MBCY-W3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：200 °C最低工作温度：-55 °C
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：10 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：15 MHzBase Number Matches：1

2N5415S 数据手册

通过下载2N5415S数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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2N5415S  
HIGH-VOLTAGE AMPLIFIER  
DESCRIPTION  
The 2N5415S is a silicon planar epitaxial PNP tran-  
sistor in Jedec TO-39 metal case, intended for high  
vol-tage switching and linear amplifier applications.  
TO-39  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Parameter  
Collector-base Voltage (IE = 0)  
Value  
– 200  
– 200  
– 4  
Unit  
V
Collector-emitter Voltage (IB = 0)  
Emitter-base Voltage (IC = 0)  
Collector Peak Current  
V
V
– 1  
A
Pto t  
Total Power Dissipation at Tamb ≤ 25 °C  
at Tcase ≤ 25 °C  
1
10  
W
W
T
st g, Tj  
Storage and Junction Temperature  
– 55 to 200  
°C  
October 1988  
1/4  
2N5415S  
THERMAL DATA  
Rth j-case  
Rth j-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
17.5  
175  
°C/W  
°C/W  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCB = – 175 V  
Min. Typ. Max. Unit  
ICBO  
Collector Cutoff Current  
(IE = 0)  
– 50  
– 50  
– 20  
µA  
µA  
µA  
ICEO  
IEBO  
Collector Cutoff Current  
(IB = 0)  
VCE = – 150 V  
VEB = – 4 V  
Emitter Cutoff Current  
(IC = 0)  
V(BR)CEO  
*
Collector-emitter  
Breakdown Voltage  
(IB = 0)  
IC = – 2 mA  
– 200  
V
VCE(sat)  
*
Collector-emitter  
Saturation Voltage  
IC = – 50 mA  
IC = – 50 mA  
IC = – 50 A  
IB = – 5 mA  
VCE = – 10 V  
VCE = – 10 V  
VCE = – 10 V  
– 2.5  
– 1.5  
150  
V
V
VBE  
hFE  
fT  
*
*
Base-Emitter Voltage  
DC Current Gain  
30  
15  
Transition Frequency  
IC = – 10 mA  
f = 5 MHz  
MHz  
pF  
CCBO  
Collector-base  
Capacitance  
IE = 0  
f = 1 MHz  
VCB = – 10 V  
15  
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.  
2/4  
2N5415S  
TO39 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
MIN.  
MAX.  
A
B
D
E
F
G
H
I
12.7  
0.500  
0.49  
6.6  
8.5  
9.4  
0.019  
0.260  
0.334  
0.370  
5.08  
0.200  
1.2  
0.9  
0.047  
0.035  
L
45o (typ.)  
D
A
G
I
H
L
P008B  
3/4  
2N5415S  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
4/4  

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