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2SD882_07

更新时间：2025-06-29 07:42:26
品牌：STMICROELECTRONICS
描述：NPN medium power transistor

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2SD882_07 概述

NPN medium power transistor NPN型中功率晶体管

2SD882_07 数据手册

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2SD882  
NPN medium power transistor  
Features  
■ High current  
■ Low saturation voltage  
■ Complement to 2SB772  
Applications  
1
■ Voltage regulation  
■ Relay driver  
2
3
SOT-32  
(TO-126)  
■ Generic switch  
■ Audio power amplifier  
■ DC-DC converter  
Figure 1.  
Internal schematic diagram  
Description  
The device is a NPN transistor manufactured by  
using planar technology resulting in rugged high  
performance devices. The complementary PNP  
type is 2SB772.  
Table 1.  
Order code  
2SD882  
Device summary  
Marking  
Package  
SOT-32  
Packing  
D882  
Tube  
October 2007  
Rev 3  
1/8  
www.st.com  
8
Absolute maximum ratings  
2SD882  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Collector-base voltage (IC = 0)  
Collector current  
60  
V
V
30  
5
V
3
A
ICM  
Collector peak current (tP < 5ms)  
Base current  
6
A
IB  
1
2
A
IBM  
Base peak current (tP < 5ms)  
Total dissipation at Tc = 25°C  
Storage temperature  
A
PTOT  
TSTG  
TJ  
12.5  
W
°C  
°C  
-65 to 150  
150  
Max. operating junction temperature  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
RthJ-case Thermal resistance junction-case max  
10  
°C/W  
2/8  
2SD882  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
CASE  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
VCE = 60 V  
Min. Typ. Max. Unit  
Collector cut-off current  
ICES  
ICEO  
IEBO  
10  
100  
10  
µA  
µA  
µA  
(VBE = 0)  
Collector cut-off current  
(IB = 0)  
VCE = 30 V  
Emitter cut-off current  
(IC = 0)  
VEB = 5 V  
Collector-emitter breakdown  
voltage  
V(BR)CEO  
IC = 10 mA  
30  
60  
5
V
V
V
(1)  
(IB = 0 )  
Collector-base breakdown  
voltage  
V(BR)CBO  
IC = 100 µA  
IE = 100 µA  
(IE = 0 )  
Emitter-base breakdown  
voltage  
V(BR)EBO  
(IC = 0 )  
IC = 1 A  
IC = 2 A  
IC = 3 A  
IB = 50 mA  
IB = 100 mA  
IB = 150 mA  
0.4  
0.7  
1.1  
V
V
V
VCE(sat)  
Collector-emitter saturation  
voltage  
(1)  
VBE(sat)  
Base-emitter saturation  
voltage  
IC = 2 A  
IB = 100 mA  
1.2  
V
(1)  
IC = 100 mA  
IC = 1 A  
VCE = 2 V 100  
300  
hFE  
DC current gain  
VCE = 2 V  
VCE = 2 V  
80  
30  
IC = 3 A  
fT  
Transition frequency  
IC = 0.1 A  
VCE = 10 V  
100  
MHz  
1. Pulsed duration = 300 ms, duty cycle ≤1.5%.  
3/8  
Electrical characteristics  
2SD882  
2.1  
Typical characteristics (curves)  
Figure 2.  
Reverse biased safe operating area Figure 3.  
DC current gain  
Figure 4.  
Collector-emitter saturation voltage Figure 5.  
Base-emitter saturation voltage  
4/8  
2SD882  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
5/8  
Package mechanical data  
2SD882  
SOT-32 (TO-126) mechanical data  
mm.  
DIM.  
MIN.  
TYP  
MAX.  
A
B
2.4  
0.64  
0.39  
10.5  
7.4  
2.9  
0.88  
0.63  
11.05  
7.8  
B1  
D
E
e
2.04  
4.07  
15.3  
2.9  
2.29  
4.58  
2.54  
5.08  
16  
e1  
L
P
3.2  
Q
Q1  
H2  
I
3.8  
1
1.52  
2.15  
2.17  
0016114E  
6/8  
2SD882  
Revision history  
4
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
Final datasheet. New template  
Updated mechanical data  
09-Sep-2005  
02-Oct-2007  
2
3
7/8  
2SD882  
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STMicroelectronics group of companies  
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8/8  

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